Silicon N-channel Power F-MOS FET

Features ● Low ON resistance RDS(on) : RDS(on) = 3.0Ω (typ.) ● High switching rate : tf = 40ns (typ.) ● No secondary breakdown ● High breakdown voltage, large power Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source

Silicon N-channel Power F-MOS FET

Features ● Low ON resistance RDS(on) : RDS(on) = 3.0Ω (typ.) ● High switching rate : tf = 40ns (typ.) ● No secondary breakdown ● High breakdown voltage, large power Applications ● No contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching power source

Fast Switching Speed

DESCRIPTION • Drain Current –ID=3A@ TC=25℃ • Drain Source Voltage- : VDSS=900V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

N-Channel MOS Field Effect Power Transistor

DESCRIPTION The 2SK797 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver. FEATURES ● Gate Drive - Logic level - ● Low RDS(on) ● No Secondary Breakdown

N CHANNEL MOS FIELD POWER TRANSISTOR

DESCRIPTION The 2SK798 is N-channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver.)

Fast Switching Speed

文件：67.58 Kbytes Page：2 Pages

2SK791

文件：40.76 Kbytes Page：1 Pages

Fast Switching Speed

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2SK792

文件：43.82 Kbytes Page：1 Pages

2SK792

Fast Switching Speed

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Fast Switching Speed

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2SK793

Trans MOSFET N-CH 850V 5A 3-Pin(3+Tab) TO-3P

2SK793

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2SK794

文件：40.2 Kbytes Page：1 Pages

Fast Switching Speed

文件：67.51 Kbytes Page：2 Pages

Fast Switching Speed

文件：65.26 Kbytes Page：2 Pages