N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance | yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA) • Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz) • Includes diode and high resistance at G - S

Field Effect Transistor

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES • Compact package • High forward transfer admittance | yfs | = 1200 μS TYP. (VDS = 5 V, ID = 0 μA) • Low capacitance Ciss = 4.5 pF (VDS =

Silicon N-Channel Junction FET

Silicon N-channel junction FET For low-frequency and low-noise amplification ■ Features • High mutual conductance gm • Low noise type • SMini type package, allowing downsizing of the sets and auto matic insertion through the tape/magazine packing

Silicon N-Channel Junction FET

Silicon N-channel junction FET For low-frequency and low-noise amplification ■ Features • High mutual conductance gm • Low noise type • SMini type package, allowing downsizing of the sets and auto matic insertion through the tape/magazine packing

For Low-Frequency Amplification

Silicon N-Channel Junction FET For low-frequency amplification For switching ■ Features ● Low noise-figure (NF) ● High gate to drain voltage VGDO ● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

Silicon N-Channel Junction FET

Silicon N-Channel Junction FET For low-frequency amplification For switching ■ Features ● Low noise-figure (NF) ● High gate to drain voltage VGDO ● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

Silicon N-Channel MOS FET

Silicon MOS FETs (Small Signal) For switching ■ Features ● High-speed switching ● S-mini type package, allowing downsizing of the sets and auto matic insertion through the tape/magazine packing.

For Switching

Silicon MOS FETs (Small Signal) For switching ■ Features ● High-speed switching ● S-mini type package, allowing downsizing of the sets and auto matic insertion through the tape/magazine packing.

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET For switching ■ Features ● High-speed switching ● Small drive current owing to high input inpedance ● High electrostatic breakdown voltage

Very High-Speed Switch, Analog Switch Applications

Very High-Speed Switch, Analog Switch Applications Features • Large |yfs|. • Enhancemet type. • Small ON resistance. Applications • Analog switches, low-pass filters, Ultrahigh-speed switches.

Silicon Junction FETs (Small Signal)

Silicon N-Channel Junction FET

Silicon N-Channel MOS FET

Drain Source Voltage-: VDSS= 400V(Min)

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