Silicon N-Channel Junction FET

For impedance conversion in low frequency For electret capacitor microphone ■Features ●Diode is connected between gate and source ●Low noise voltage

For Impedance Conversion In Low Frequency

For impedance conversion in low frequency For electret capacitor microphone ■Features ●Diode is connected between gate and source ●Low noise voltage

Silicon N-Channel Junction FET

FAST SWITCHING N-CHANNEL SILICON POWER MOSFET

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET For switching ■ Features ● High-speed switching ● Allowing to supply with the radial taping

For Switching

Silicon N-Channel MOS FET For switching ■ Features ● High-speed switching ● Allowing to supply with the radial taping

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET For switching ■ Features ● High-speed switching ● Small drive current owing to high input inpedance ● High electrostatic breakdown voltage

For Switching

Silicon N-Channel MOS FET For switching ■ Features ● High-speed switching ● Small drive current owing to high input inpedance ● High electrostatic breakdown voltage

Silicon N-Channel MOS FET

For switching ■Features ●High-speed switching ●M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

For Switching

For switching ■Features ●High-speed switching ●M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 75mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N CHANNEL MOS FIELD EFECT POWER TRANSISTOR

DESCRIPTION The 2SK659 is N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp drivers. FEATURES ● 4 V Gate Drive - Logic level - ● Low RDS(on) ● No Second Breakdown

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

Silicon N-Channel MOS FET