MOS FIELD EFFECT POWER TRANSISTOR

FAST SWITCHING N-CHANNEL SILICON POWER MOS FET INDUSTRIAL USE FEATURES ● Suitable for switching power supplies, actuater controls, and pulse circuits. ● Low Ciss ● No second breakdown ● 4 V Gate Drive - Logic level -

N-Channel 100 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 UIS tested APPLICATIONS • Primary side switch

MOS Field Effect Power Transistors

MOS Field Effect Power Transistors

MOS Field Effect Power Transistors

MOS Field Effect Power Transistors

Silicon N-Channel MOS FET

For switching ■Features ●Low ON-resistance RDS(on) ●High-speed switching ●Allowing to be driven directly by CMOS and TTL

For switching

For switching ■Features ●Low ON-resistance RDS(on) ●High-speed switching ●Allowing to be driven directly by CMOS and TTL

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET For switching ■ Features ● Low ON-resistance ● High-speed switching ● Allowing to be driven directly by CMOS and TTL ● M type package, allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

Drain Source Voltage-: VDSS= 400V(Min)

文件：64.51 Kbytes Page：2 Pages

MOS Field Effect Power Transistors

MOS Field Effect Power Transistors

Silicon N-Channel MOS FET

Fast Switching Speed

文件：58.86 Kbytes Page：2 Pages

Drain Source Voltage-: VDSS= 800V(Min)

文件：67.32 Kbytes Page：2 Pages

SILICON N-CHANNEL MOS FET

文件：35.94 Kbytes Page：1 Pages