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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK409 | SILICON N CHANNEL MOS FET HF/VHF POWER AMPLIFIER | HitachiHitachi Semiconductor 日立日立公司 |   | |
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4090 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 m | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4090 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 m | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4090 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 m | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4090 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 6.0 m | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4091 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low o | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4091 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low o | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4091 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low o | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4091 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low o | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low on-state resistance RDS(on)= 0.4 ΩMAX. (VGS= 10 V, ID= | NEC 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low on-state resistance RDS(on)= 0.4 ΩMAX. (VGS= 10 V, ID= | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance RDS(on | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Capable of 2.5V gate drive • Low drive current • Low on-resistance | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Capable of 2.5V gate drive • Low drive current • Low on-resistance | RENESAS 瑞萨 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=3.8mΩ(typ.) • Input capacitance Ciss=12500pF (typ.) •4V drive | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK4095 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high- | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK4095 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high- | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK4095 is the best switching element for the DC-DC converter usage from 24 to 48 V in the direct current input voltage. It excels in the switching characteristics in low on-state resistance, and is the best for the high- | RENESAS 瑞萨 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • ON-resistance RDS(on)=0.65Ω(typ.) •10V drive • Input capacitance Ciss=600pF | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching. • Adoption of high reliability HVP process. • Attachment workability is good by Mica-less package. • Avalanche resistance guarantee. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
N-Channel Power MOSFET Features • ON-resistance RDS(on)=0.72Ω(typ.) •10V drive • Input capacitance Ciss=750pF | ONSEMI 安森美半导体 | | ||
N-Channel Power MOSFET Features • ON-resistance RDS(on)=0.72Ω(typ.) •10V drive • Input capacitance Ciss=750pF | ONSEMI 安森美半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：960.02 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：330.65 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：398.51 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 30-V (D-S) MOSFET 文件：960.02 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：125.71 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
N-Channel MOSFET uses advanced trench technology 文件：974.01 Kbytes Page：4 Pages | DOINGTER 杜因特 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：350.96 Kbytes Page：5 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
N-Channel Power MOSFET 文件：280.97 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor 文件：303.76 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications 文件：350.96 Kbytes Page：5 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
N-Channel Power MOSFET 文件：280.97 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
N-Channel Power MOSFET 文件：256.85 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications 文件：354.91 Kbytes Page：7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
isc N-Channel MOSFET Transistor 文件：324.28 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
General-Purpose Switching Device Applications 文件：354.91 Kbytes Page：7 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
N-Channel Power MOSFET 文件：256.85 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor 文件：324.62 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：324.78 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：324.46 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
General-Purpose Switching Device Applications 文件：72.98 Kbytes Page：5 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | ||
General-Purpose Switching Device Applications 文件：72.98 Kbytes Page：5 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |
2SK409产品属性
- 类型
描述
- 型号
2SK409
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
SILICON N CHANNEL MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI/日立 |
24+ |
TO 220 |
158473 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
2016+ |
TO-3P |
3440 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
三洋 |
2024 |
TO-220F |
13500 |
16余年资质 绝对原盒原盘代理渠道 更多数量 |
|||
SANYO |
25+23+ |
TO-220F |
22528 |
绝对原装正品全新进口深圳现货 |
|||
24+ |
60000 |
||||||
HITACHI/日立 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
|||
RENESAS |
24+ |
TO-3P |
5000 |
全新原装正品,现货销售 |
|||
SANYO三洋 |
17+ |
TO-220F |
6200 |
||||
SANYO |
25+ |
TO-220 |
12588 |
原装正品,自己库存 假一罚十 |
|||
NEC |
25+ |
TO-251TO-252 |
280 |
全新原装正品支持含税 |
2SK409规格书下载地址
2SK409参数引脚图相关
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- 2SK4096LS
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- 2SK4090-ZK-E1-AY
- 2SK4089LS
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- 2SK4087LS_0710
- 2SK4087LS
- 2SK4086LS-YB11
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- 2SK4086LS
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- 2SK4085LS-1E
- 2SK4085LS_12
- 2SK4085LS_0710
- 2SK4085LS
- 2SK4084LS
- 2SK4082-S17-AY
- 2SK4082
- 2SK4081-ZK-E2-AY
- 2SK4081-ZK-E1-AY
- 2SK4081-S27-AY
- 2SK4081
- 2SK4080
- 2SK408
- 2SK4078
- 2SK4070
- 2SK4069
- 2SK4067
- 2SK4066
- 2SK4065
- 2SK4058
- 2SK4057
- 2SK405
- 2SK4044
- 2SK4042
- 2SK404
- 2SK4037
- 2SK4035
- 2SK4034
2SK409数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-102SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-282SK3591-01R
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2020-3-28
DdatasheetPDF页码索引
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