| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3878 | Silicon N-Channel MOS Type Switching Regulator Applications Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) | TOSHIBA 东芝 |   | |
2SK3878 | Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | |
2SK3878 | 丝印代码：K3878；TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) | TOSHIBA 东芝 | | |
2SK3878 | Power MOSFET (N-ch 700V VDSS) Polarity：N-ch\nGeneration：π-MOSⅣ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 9 A \nPower Dissipation PD 150 W \nDrain-Source voltage VDSS 900 V ; | TOSHIBA 东芝 | | |
2SK3878 | THINKISEMI 9A,900V N-CHANNEL PLANAR STRIPE POWER MOSFETs 文件：1.39583 Mbytes Page：6 Pages | THINKISEMI 思祁半导体 | | |
2SK3878 | N-Channel Power MOSFET 文件：342.17 Kbytes Page：6 Pages | NELLSEMI 尼尔半导体 | | |
2SK3878 | 丝印代码：K3878；Switching Regulator Applications 文件：212.41 Kbytes Page：6 Pages | TOSHIBA 东芝 | | |
2SK3878 | N-Channel Mosfet Transistor 文件：201.27 Kbytes Page：2 Pages | ISC 无锡固电 | | |
2SK3878 | isc N-Channel MOSFET Transistor 文件：323.05 Kbytes Page：2 Pages | ISC 无锡固电 | | |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) | TOSHIBA 东芝 | | ||
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) | TOSHIBA 东芝 | | ||
Switching Regulator Applications 文件：212.41 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
isc N-Channel MOSFET Transistor 文件：323.05 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK3878产品属性
- 类型
描述
- Product Category：
Power MOSFET (N-ch 700V＜VDSS)
- Package name(Toshiba)：
TO-3P(N)
- Recommended Product 1：
TK9J90E(Almost same package but similar characteristics)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA(东芝) |
26+ |
10548 |
原厂订货渠道,支持账期,一站式服务! |
||||
TOSHIBA |
TO3P |
80000 |
2012 |
||||
TOSHIBA |
26+ |
TO-3P |
30000 |
东芝半导体QQ350053121正纳全系列代理经销 |
|||
TOSHIBA/东芝 |
21+ |
TO-3P |
6000 |
正规报关原装现货系列终端客户可以技术支持 |
|||
TOSHIBA/东芝 |
25+ |
TO-247 |
45000 |
TOSHIBA/东芝全新现货2SK3878即刻询购立享优惠#长期有排单订 |
|||
TOSHIBA |
2540+ |
TO-P3 |
9854 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TOSHIBA/东芝 |
26+ |
TO-3P |
20000 |
原装正品支持实单 |
|||
2SK3878 |
26+ |
TO-3P |
15601 |
全新原装正品,价格优势,长期供应,量大可订 |
|||
TOSHIBA(东芝) |
24+ |
N/A |
12600 |
原装正品现货支持实单 |
|||
TOSHIBA/东芝 |
22+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-3P |
2SK3878芯片相关品牌
2SK3878规格书下载地址
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2SK3878数据表相关新闻
2SMPP-02
优势渠道
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2021-6-242SX1-T
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2020-3-28
DdatasheetPDF页码索引
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