Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.7Ω (typ.) • High forward transfer admittance: |Yfs| = 2.5S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 600 V) • Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 600 V) • Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 5.6Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 720 V) • Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

Field Effect Transistor Silicon N Channel MOS Type ( pi -MOSIV)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) • High forward transfer admittance: |Yfs| = 2.6 S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 720 V) • Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.65 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement model: Vth = 3.5~4.5 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 3.3Ω(typ.) • High forward transfer admittance: |Yfs| = 1.6S (typ.) • Low leakage current: IDSS= 100μA (VDS= 600 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

N-Channel 650 V (D-S) MOSFET

文件：1.08667 Mbytes Page：9 Pages

MOSFET 2SK/2SJ Series

Field Effect Transistor Silicon N Channel MOS Type ( pi -MOSIV)

Switching Regulator Applications

文件：259.99 Kbytes Page：6 Pages

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications

文件：259.99 Kbytes Page：6 Pages

Switching Regulator Applications

文件：199.5 Kbytes Page：6 Pages

Silicon N Channel MOS Type Switching Regulator Applications

文件：217.29 Kbytes Page：6 Pages

Silicon N Channel MOS Type Switching Regulator Applications

文件：217.29 Kbytes Page：6 Pages

Switching Regulator Applications

文件：199.5 Kbytes Page：6 Pages

N-CHANNEL SILICON POWER MOSFET

文件：105.5 Kbytes Page：4 Pages