型号 功能描述 生产厂家&企业 LOGO 操作
2SK369

NCHANNELJUNCTIONTYPE(FORLOWNOISEAUDIOAMPLIFIERAPPLICATIONS)

ForLowNoiseAudioAmplifierApplications *SuitableforuseasfirststageforequalizerandMCheadamplifiers. *High|Yfs|:|Yfs|=40mS(typ.)(VDS=10V,VGS=0,IDSS=5mA) *Highbreakdownvoltage:VGDS=−40V(min) *Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK369

ForLowNoiseAudioAmplifierApplications

ForLowNoiseAudioAmplifierApplications *SuitableforuseasfirststageforequalizerandMCheadamplifiers. *High|Yfs|:|Yfs|=40mS(typ.)(VDS=10V,VGS=0,IDSS=5mA) *Highbreakdownvoltage:VGDS=−40V(min) *Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA
2SK369

SiliconNChannelJunctionTypeForLowNoiseAudioAmplifierApplications

文件:754.06 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

N-CHANNELSILICONPOWERMOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower Avalanche-proof Applications Switchingregulators DC-DCconverters UPS(UninterruptiblePowerSupply)

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-CHANNELSILICONPOWERMOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower Avalanche-proof Applications Switchingregulators DC-DCconverters UPS(UninterruptiblePowerSupply)

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNELSILICONPOWERMOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower Avalanche-proof Applications Switchingregulators DC-DCconverters UPS(UninterruptiblePowerSupply)

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNELSILICONPOWERMOSFET

Features •Highspeedswitching •Lowon-resistance •Nosecondarybreadown •Lowdrivingpower •Avalanche-proof Applications •Switchingregulators •UPS(UninterruptiblePowerSupply) •DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

Fuji

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-CHANNELSILICONPOWERMOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNELSILICONPOWERMOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-CHANNELSILICONPOWERMOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

Fuji

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-CHANNELSILICONPOWERMOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNELSILICONPOWERMOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

Fuji

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.38Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-CHANNELSILICONPOWERMOSFET

N-CHANNELSILICONPOWERMOSFET Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators DC-DCconverters UPS(UninterruptiblePowerSupply)

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNELSILICONPOWERMOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators DC-DCconverters UPS(UninterruptiblePowerSupply)

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNELSILICONPOWERMOSFET

FUJIPOWERMOSFETSuperFAP-GSeries ■Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower Avalanche-proof ■Applications Switchingregulators DC-DCconverters UPS(UninterruptiblePowerSupply)

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNELSILICONPOWERMOSFET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

Fuji

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.7A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=3.7A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-CHANNELSILICONPOWERMOSFET

■Features •Highspeedswitching •Lowon-resistance •Nosecondarybreadown •Lowdrivingpower •Avalanche-proof ■Applications •Switchingregulators •UPS(UninterruptiblePowerSupply) •DC-DCconverters

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-CHANNELSILICONPOWERMOSFET

FUJIPOWERMOSFETSuperFAP-GSeries Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

Fuji

ForLowNoiseAudioAmplifierApplications

ForLowNoiseAudioAmplifierApplications *SuitableforuseasfirststageforequalizerandMCheadamplifiers. *High|Yfs|:|Yfs|=40mS(typ.)(VDS=10V,VGS=0,IDSS=5mA) *Highbreakdownvoltage:VGDS=−40V(min) *Superlownoise:NF=1.0dB(typ.) (VDS=10V,ID=5

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

SiliconNChannelJunctionTypeForLowNoiseAudioAmplifierApplications

文件:754.06 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

N-Channel650V(D-S)MOSFET

文件:1.0867 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

2SK369产品属性

  • 类型

    描述

  • 型号

    2SK369

  • 制造商

    Fuji Electric

  • 功能描述

    MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 1.8 Ohms;ID 4.5A;TO-220AB;PD 80W;VGS +/-30V

更新时间:2024-5-8 14:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
22+
TO-92
32350
原装正品 假一罚十 公司现货
TOSHIBA
2013
TO-92
342
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TOSHIBA
2023+
TO-92
58000
进口原装,现货热卖
TOSHIBA/东芝
23+
TO-92
25500
授权代理直销,原厂原装现货,假一罚十,特价销售
FUJITSU/富士通
24+
TO220F
880000
明嘉莱只做原装正品现货
富士通
23+
TO-247
3000
全新原装
TOSHIBA
21+
TO-92
1012
原装现货假一赔十
FUJITSU/富士通
2022+
TO-220F
32500
原厂代理 终端免费提供样品
TOSHIBA/Toshiba Semiconductor/
21+
TO-92
1012
优势代理渠道,原装正品,可全系列订货开增值税票
FUJI
21+
TO-220F
9866

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