型号 功能描述 生产厂家 企业 LOGO 操作
2SK369

N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)

For Low Noise Audio Amplifier Applications * Suitable for use as first stage for equalizer and MC head amplifiers. * High |Yfs|: |Yfs| = 40 mS (typ.) (VDS= 10 V, VGS= 0, IDSS= 5 mA) * High breakdown voltage: VGDS= −40 V (min) * Super low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 5

TOSHIBA

东芝

2SK369

For Low Noise Audio Amplifier Applications

For Low Noise Audio Amplifier Applications * Suitable for use as first stage for equalizer and MC head amplifiers. * High |Yfs|: |Yfs| = 40 mS (typ.) (VDS= 10 V, VGS= 0, IDSS= 5 mA) * High breakdown voltage: VGDS= −40 V (min) * Super low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 5

TOSHIBA

东芝

2SK369

Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

文件:754.06 Kbytes Page:5 Pages

TOSHIBA

东芝

2SK369

Silicon N Channel Junction Type Field Effect Transistor

TOSHIBA

东芝

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)

SANYO

三洋

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features • High speed switching • Low on-resistance • No secondary breadown • Low driving power • Avalanche-proof Applications • Switching regulators • UPS (Uninterruptible Power Supply) • DC-DC converters

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

SANYO

三洋

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

FUJI POWER MOSFET Super FAP-G Series ■ Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof ■ Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.7A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 3.7A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

■ Features • High speed switching • Low on-resistance • No secondary breadown • Low driving power • Avalanche-proof ■ Applications • Switching regulators • UPS (Uninterruptible Power Supply) • DC-DC converters

SANYO

三洋

For Low Noise Audio Amplifier Applications

For Low Noise Audio Amplifier Applications * Suitable for use as first stage for equalizer and MC head amplifiers. * High |Yfs|: |Yfs| = 40 mS (typ.) (VDS= 10 V, VGS= 0, IDSS= 5 mA) * High breakdown voltage: VGDS= −40 V (min) * Super low noise: NF = 1.0dB (typ.) (VDS= 10 V, ID= 5

TOSHIBA

东芝

Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

文件:754.06 Kbytes Page:5 Pages

TOSHIBA

东芝

N-Channel 650 V (D-S) MOSFET

文件:1.0867 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL SILICON POWER MOSFET

Fuji

富士通

功率MOSFET 400V-500V

Fuji

富士通

2SK369产品属性

  • 类型

    描述

  • 型号

    2SK369

  • 制造商

    Fuji Electric

  • 功能描述

    MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 1.8 Ohms;ID 4.5A;TO-220AB;PD 80W;VGS +/-30V

更新时间:2025-10-17 14:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FUJI/富士电机
23+
N/A
9000
专业配单,原装正品假一罚十,代理渠道价格优
24+
60000
TOSHIBA
24+/25+
3200
原装正品现货库存价优
FUJI
1922+
TO-220F
7823
原装进口现货库存专业工厂研究所配单供货
FUJI(富士电机)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
FUIJITSU
24+
TO-220F
8000
新到现货,只做全新原装正品
FUJI/富士电机
22+
TO220F
12245
现货,原厂原装假一罚十!
FUJ
18+
TO-220F
85600
保证进口原装可开17%增值税发票
FUJI/富士电机
21+
TO220F
1000
FUJI/富士电机
25+
TO-220
45000
FUJI/富士电机全新现货2SK3698-01即刻询购立享优惠#长期有排单订

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