型号 功能描述 生产厂家 企业 LOGO 操作
2SK367

MINI PACKAGE SERIES

Application General Purpose > Low Noise High Voltage High Current High Current Low Impedance Low Noise (NEW Audio Drive & Out NEW High B Muting & SW FM RF, MIX OSC AM CONV. FM/AM IF AM FF, CONV IF FM/AM RF, MIX OSC Application General Purpose High IYfsl Low Noise Analog SW & Ge

TOSHIBA

东芝

2SK367

N CHANNEL JUNCTION TYPE FOR AUDIO, HIGH VOLTAGE AMPLIFIER AND CONSTANT CURRENT APPLICATIONS)

文件:202.32 Kbytes Page:3 Pages

TOSHIBA

东芝

2SK367

Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications

文件:633.64 Kbytes Page:4 Pages

TOSHIBA

东芝

2SK367

Field Effect Transistor Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 700V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.18Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 7.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

isc N-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching applicati

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.58Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ISC

无锡固电

Fuji Power MOSFET SuperFAP-G series Target Specification

FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.58Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ISC

无锡固电

Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications

文件:633.64 Kbytes Page:4 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Chopper Regulator and DC−DC Converter Applications

文件:178.74 Kbytes Page:3 Pages

TOSHIBA

东芝

封装/外壳:TO-226-3,TO-92-3 长体 包装:卷带(TR) 描述:MOSFET N-CH TO92MOD 分立半导体产品 晶体管 - FET,MOSFET - 单个

ETC

知名厂家

封装/外壳:TO-226-3,TO-92-3 长体 包装:卷带(TR) 描述:MOSFET N-CH TO92MOD 分立半导体产品 晶体管 - FET,MOSFET - 单个

ETC

知名厂家

N-CHANNEL SILICON POWER MOSFET

Fuji

富士通

Power MOSFET SuperFAP-G series Target Specification

Fuji

富士通

Power MOSFET SuperFAP-G series Target Specification

文件:98.98 Kbytes Page:4 Pages

Fuji

富士通

Power MOSFET SuperFAP-G series Target Specification

文件:98.98 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:277.06 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:277.06 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:277.06 Kbytes Page:4 Pages

Fuji

富士通

Power MOSFET SuperFAP-G series Target Specification

文件:98.98 Kbytes Page:4 Pages

Fuji

富士通

Power MOSFET SuperFAP-G series Target Specification

文件:98.98 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:277.06 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:126.21 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:271.66 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:271.66 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:271.66 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:121.73 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:119.7 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:121.73 Kbytes Page:4 Pages

Fuji

富士通

2SK367产品属性

  • 类型

    描述

  • 型号

    2SK367

  • 制造商

    Toshiba

  • 功能描述

    Trans MOSFET N-CH 150V 0.67A 3-Pin TO-92 Mod Bulk

更新时间:2025-12-24 23:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
24+
TO-220F
27500
原装正品,价格最低!
FUJI/富士电机
24+
NA/
4250
原装现货,当天可交货,原型号开票
FUJ
2016+
TO-220F
6000
公司只做原装,假一罚十,可开17%增值税发票!
FUJITSU/富士通
25+
TO-220F
45000
FUJITSU/富士通全新现货2SK3677即刻询购立享优惠#长期有排单订
FUJ
24+
TO263
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
FUJI
24+/25+
1915
原装正品现货库存价优
FUJI/富士电机
2450+
TO-220F
9850
只做原装正品现货或订货假一赔十!
FUJI
TO-220
68500
一级代理 原装正品假一罚十价格优势长期供货
FUJI/富士电机
25+
TO-263
30000
全新原装现货,价格优势
FUJI
NEW
TO-220F
9516
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订

2SK367数据表相关新闻

  • 2SMPP-02

    优势渠道

    2023-2-16
  • 2SK3105-T1B-A找代理商上深圳百域芯科技

    2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package

    2021-6-24
  • 2SX1-T

    2SX1-T,全新原装现货0755-82732291当天发货或门市自取. QQ:1755232575 /QQ:1157611585,微信号:87680558.

    2021-2-10
  • 2SK508G-K51-AE3-R

    属性 参数值 商品目录 结型场效应晶体管(JFET) 连续漏极电流(Id)(25°C 时) 50mA 漏源电压(Vdss) 15V 类型 N 沟道 最大功率耗散(Ta=25°C) 200mW

    2020-11-12
  • 2SK3313

    2SK3313,全新原装当天发货或门市自取0755-82732291.

    2020-3-28
  • 2SK3591-01R

    2SK3591-01R,全新原装当天发货或门市自取0755-82732291.

    2020-3-28