型号 功能描述 生产厂家 企业 LOGO 操作
2SK359

Silicon N-Channel MOS FET

Application VHF amplifier

HitachiHitachi Semiconductor

日立日立公司

2SK359

Silicon N-Channel MOS FET

HitachiHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 41mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 41mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 41mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 66mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 66mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 66mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 66mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 62mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 62mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:105.45 Kbytes Page:4 Pages

Fuji

富士通

isc N-Channel MOSFET Transistor

文件:331.03 Kbytes Page:2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

Fuji

富士通

功率MOSFET 100V-300V

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:106.33 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:106.33 Kbytes Page:4 Pages

Fuji

富士通

N-Channel 200 V (D-S) MOSFET

文件:1.02791 Mbytes Page:9 Pages

VBSEMI

微碧半导体

N-CHANNEL SILICON POWER MOSFET

文件:274.31 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:274.31 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:274.31 Kbytes Page:4 Pages

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

文件:274.31 Kbytes Page:4 Pages

Fuji

富士通

POWER MOSFET N-CHANNEL SILICON POWER MOSFET

文件:110.46 Kbytes Page:4 Pages

SANYO

三洋

N-CHANNEL SILICON POWER MOSFET Super FAP-G Series

文件:97.73 Kbytes Page:4 Pages

Fuji

富士通

2SK359产品属性

  • 类型

    描述

  • 型号

    2SK359

  • 制造商

    Fuji Electric

  • 功能描述

    MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 31 Milliohms;ID +/-57A;TO-220AB;PD 270W

  • 制造商

    Fuji Electric

  • 功能描述

    MOSFET N TO-220AB

  • 制造商

    Fuji Electric

  • 功能描述

    MOSFET, N, TO-220AB

更新时间:2025-12-25 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FUJI/富士电机
24+
NA/
3278
原装现货,当天可交货,原型号开票
FUJITSU/富士通
25+
TO263
54648
百分百原装现货 实单必成 欢迎询价
FUJITSU/富士通
24+
TO-220F
157153
明嘉莱只做原装正品现货
FUJI
24+
TO-263
6300
只做原装正品现货 欢迎来电查询15919825718
FUJI
原厂封装
1000
一级代理 原装正品假一罚十价格优势长期供货
FUJI/富士电机
23+
N/A
9000
专业配单,原装正品假一罚十,代理渠道价格优
FUJI/富士电机
10+P
TO-220
500
FUJI
NEW
TO-220F
9516
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
FUJ
25+
136
公司优势库存 热卖中!
FUJI/富士电机
25+
TO-220
30000
全新原装现货,价格优势

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