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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3385 | MOSFieldEffectTransistor Features Lowon-resistance RDS(on)1=28mMAX.(VGS=10V,ID=15A) RDS(on)2=45mMAX.(VGS=4.0V,ID=15A) LowCiss:Ciss=1500pFTYP. Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |  |   |
2SK3385 | SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3385isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •LowOn-stateResistance RDS(on)1=28mΩMAX.(VGS=10V,ID=15A) RDS(on)2=45mΩMAX.(VGS=4.0V,ID=15A) •LowCiss:Ciss=1500pFT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
2SK3385 | MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3385isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Lowon-stateresistance RDS(on)1=28mΩMAX.(VGS=10V,ID=15A) RDS(on)2=45mΩMAX.(VGS=4.0V,ID=15A) •LowCi | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
2SK3385 | iscN-ChannelMOSFETTransistor 文件：398.95 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2SK3385 | N-Channel60V(D-S)MOSFET 文件：960.08 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
SWITCHINGN-CHANNELPOWERMOSFETINDUSTRIALUSE DESCRIPTION The2SK3385isN-ChannelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •LowOn-stateResistance RDS(on)1=28mΩMAX.(VGS=10V,ID=15A) RDS(on)2=45mΩMAX.(VGS=4.0V,ID=15A) •LowCiss:Ciss=1500pFT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3385isN-ChannelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Lowon-stateresistance RDS(on)1=28mΩMAX.(VGS=10V,ID=15A) RDS(on)2=45mΩMAX.(VGS=4.0V,ID=15A) •LowCi | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGN-CHANNELPOWERMOSFET 文件：236.93 Kbytes Page：10 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：331.42 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel60-V(D-S)MOSFET 文件：896.94 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
2SK3385产品属性
- 类型
描述
- 型号
2SK3385
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-251 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS |
20+ |
TO252 |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
23+ |
TO-252/251 |
35890 |
||||
RENESAS/瑞萨 |
24+ |
TO253 |
990000 |
明嘉莱只做原装正品现货 |
|||
NEC |
2339+ |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
RENESAS/瑞萨 |
23+ |
TO-252 |
33500 |
全新进口原装现货,假一罚十 |
|||
NEC |
08+(pbfree) |
TO-251 |
8866 |
||||
TOSHIBA/东芝 |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
Renesas |
21+ |
- |
55 |
全新原装 鄙视假货15118075546 |
|||
TOSHIBA/东芝 |
TO252 |
7906200 |
2SK3385芯片相关品牌
2SK3385规格书下载地址
2SK3385参数引脚图相关
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- 2SK3372
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- 2SK3360
- 2SK3359
- 2SK3358
- 2SK3357
- 2SK3356
- 2SK3355
- 2SK3354
- 2SK3353
2SK3385数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3484-Z-E1-AZ ManufacturerPartNumber: 2SK3484-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: NotRecommended IhsManufacturer: RENESASELECTRONICSCORP PartPackage
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK3105-T1B-A ManufacturerPartNumber: 2SK3105-T1B-A Brand_Name: Renesas PbfreeCode: Yes RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP P
2021-6-242SK508G-K51-AE3-R
属性参数值 商品目录结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C时）50mA 漏源电压（Vdss）15V 类型N沟道 最大功率耗散（Ta=25°C）200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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