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型号 功能描述 生产厂家 企业 LOGO 操作
2SK3367

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1= 9.0 mΩMAX. (VGS= 10 V, ID= 18 A) RDS(on)2= 12.0 mΩMAX. (VGS

NEC

瑞萨

2SK3367

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 12.0 mΩ MAX. (VGS = 4.5 V, ID = 18 A

RENESAS

瑞萨

2SK3367

isc N-Channel MOSFET Transistor

文件:399.29 Kbytes Page:2 Pages

ISC

无锡固电

2SK3367

MOS Field Effect Transistor

文件:47.5 Kbytes Page:1 Pages

KEXIN

科信电子

2SK3367

N-Channel 30-V (D-S) MOSFET

文件:959.92 Kbytes Page:8 Pages

VBSEMI

微碧半导体

2SK3367

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

RENESAS

瑞萨

Nch Single Power Mosfet 30V 36A 9.0Mohm Mp-3Z/To-252

The 2SK3367-Z is a Nch Single Power Mosfet 30V 36A 9.0Mohm Mp-3Z/To-252. • Low on-resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 12.0 mΩ MAX. (VGS = 4.5 V, ID = 18 A) RDS(on)3 = 14.0 mΩ MAX. (VGS = 4.0 V, ID = 18 A)\n• Low Ciss : Ciss = 2800 pF TYP.\n• Built-in gate protection diode\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应;

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1= 9.0 mΩMAX. (VGS= 10 V, ID= 18 A) RDS(on)2= 12.0 mΩMAX. (VGS

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES • Low on-resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 12.0 mΩ MAX. (VGS = 4.5 V, ID = 18 A

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET

文件:237.98 Kbytes Page:9 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:331.74 Kbytes Page:2 Pages

ISC

无锡固电

2SK3367产品属性

  • 类型

    描述

  • 型号

    2SK3367

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    Trans MOSFET N-CH 30V 36A 3-Pin(3+Tab) TO-251

更新时间:2026-8-2 14:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
最新
TO-252
12500
原装现货价格优势可供更多可出样
NEC
24+
TO-252
8866
NEC
20+
TO-252
36900
原装优势主营型号-可开原型号增税票
NEC
08+
TO263
787
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
2022+
TO-252
6350
原厂代理 终端免费提供样品
NEC
2602+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
2023+
TO-252
8800
正品渠道现货 终端可提供BOM表配单。
NEC
26+
TO-252/251
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
RENESAS
25+
TO-252
28000
原装正品,可来电咨询
RENESAS
24+
TO-252
16900
原装正品现货支持实单

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