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2SK334价格
参考价格：￥1.3000
型号：2SK3342 品牌：TOSHIBA 备注：这里有2SK334多少钱，2025年最近7天走势，今日出价，今日竞价，2SK334批发/采购报价，2SK334行情走势销售排行榜，2SK334报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK334 | Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES FEATURE • Because it has an ultra-compact outline, sets can be made compact. | SANYO 三洋 |   | |
2SK334 | Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES | ONSEMI 安森美半导体 | | |
N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications ● Low drain-source ON resistance : RDS (ON) = 0.8 Ω (typ.) ● High forward transfer admittance : |Yfs| = 4.5 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 250 V) ● Enhancement mode : Vth = 1.5 to 3.5 V | TOSHIBA 东芝 | | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
Silicon N Channel MOS FET High Speed Switching Silicon N Channel MOS FET High Speed Switching Features • Low on-resistance RDS= 1.6 Ωtyp. (VGS= 4 V , ID= 50 mA) RDS= 2.2 Ωtyp. (VGS= 2.5 V , ID= 50 mA) • 2.5 V gate drive device. • Small package (CMPAK) | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA) • 2.5 V gate drive device. • Small package (CMPAK) | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) RDS = 4.8 Ω typ. (at VGS = 2.5 V , ID = 10 mA) • 2.5 V gate drive device • Small package (SMPAK) | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 2.8 Ω typ. (at VGS = 4 V , ID = 25 mA) RDS = 4.8 Ω typ. (at VGS = 2.5 V , ID = 10 mA) • 2.5 V gate drive device • Small package (SMPAK) | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：330.4 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：375.07 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-CHANNEL SILICON POWER MOS-FET | Fuji 富士通 | | ||
isc N-Channel MOSFET Transistor 文件：330.1 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：374.77 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFET (N-ch 150V VDSS 250V) | TOSHIBA 东芝 | | ||
Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications 文件：249.95 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
Switching Regulator and DC-DC Converter Applications Motor Drive Applications 文件：238.06 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications 文件：249.95 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
Switching Regulator and DC-DC Converter Applications Motor Drive Applications 文件：238.06 Kbytes Page：6 Pages | TOSHIBA 东芝 | |
2SK334产品属性
- 类型
描述
- 型号
2SK334
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
2450+ |
SOT323 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
RENESAS/瑞萨 |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
|||
TOS |
24+ |
SOT252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
11+ |
TO-252 |
5000 |
现货 |
|||
TOSHIBA/东芝 |
25+ |
D-PAK |
880000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA |
24+/25+ |
850 |
原装正品现货库存价优 |
||||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
TOSHIBA/东芝 |
25+ |
TO-252251 |
45000 |
TOSHIBA/东芝全新现货2SK3343即刻询购立享优惠#长期有排单订 |
|||
TOSHIBA |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
TOSHIBA/东芝 |
24+ |
TO-252 |
30000 |
只做正品原装现货 |
2SK334规格书下载地址
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2SK334数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-28
DdatasheetPDF页码索引
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