位置：首页 > IC中文资料第6136页 > 2SK3299
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3299 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. | NEC 瑞萨 |   | |
2SK3299 | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. FEATURES ·Low gate charge Q | RENESAS 瑞萨 | | |
2SK3299 | MOS Field Effect Transistor 文件：44.07 Kbytes Page：1 Pages | KEXIN 科信电子 | | |
2SK3299 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3299B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 30 nC TYP. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3299B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 30 nC TYP. | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. FEATURES ·Low gate charge Q | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. FEATURES ·Low gate charge Q | RENESAS 瑞萨 | | ||
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE The 2SK3299 is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. | NEC 瑞萨 | |
2SK3299产品属性
- 类型
描述
- 型号
2SK3299
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2402+ |
TO-263 |
8324 |
原装正品!实单价优! |
|||
NEC |
26+ |
TO-220 |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
NEC |
24+ |
TO262 |
43200 |
郑重承诺只做原装进口现货 |
|||
Renesas |
21+ |
20200 |
只做原装鄙视假货15118075546 |
||||
NEC |
2023+ |
TO262 |
5225 |
原厂全新正品旗舰店优势现货 |
|||
NEC |
2016+ |
TO262 |
5225 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NEC |
24+ |
TO-262 |
841 |
||||
NEC |
24+ |
17+ |
2 |
TO-220F |
|||
RENESAS/瑞萨 |
25+ |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
RENESAS/瑞萨 |
12+ |
TO-263 |
20000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
2SK3299规格书下载地址
2SK3299参数引脚图相关
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- 2SK3305-Z-E1-AZ
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- 2SK3304
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- 2SK3295-ZJ
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- 2SK3291
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- 2SK3290
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- 2SK3287
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2SK3299数据表相关新闻
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2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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