N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SK3107 is a switching device which can be driven directly by a 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5-V power source • Low gate cu

丝印代码：D1；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK3107 is a switching device which can be driven directly by a 2.5 V power source. The 2SK3107 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circui

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION\nThe 2SK3107 is a switching device which can be driven directly by a 2.5-V power source.\nThe 2SK3107 has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.FEATURES\n• Can be driven by a 2.5-V power source\n• Low gate cut-of • Can be driven by a 2.5-V power source\n• Low gate cut-off voltage ;

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features • Directly driven by a 4.5 V power source. • Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA)

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features • Directly driven by a 4.5 V power source. • Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA)

N-CHANNEL MOSFET FOR SWITCHING

Description The 2SK3107C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features • Directly driven by a 4.5 V power source. • Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = 10 V, ID = 100 mA)

Power MOSFETs-Power MOSFETs for Automotive

Nch enhancement type MOS FET