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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3060 | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP. • Built-in | NEC 瑞萨 |   | |
2SK3060 | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = | RENESAS 瑞萨 | | |
2SK3060 | isc N-Channel MOSFET Transistor 文件：333.42 Kbytes Page：2 Pages | ISC 无锡固电 | | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP. • Built-in | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP. • Built-in | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP. • Built-in | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3060 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：327.41 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：401.56 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：401.7 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK3060产品属性
- 类型
描述
- 型号
2SK3060
- 功能描述
2SK3060 Data Sheet | Data Sheet[04/2001]
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAYNO |
24+ |
30000 |
|||||
NEC |
17+ |
TO-220 |
6200 |
||||
NEC |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
N |
22+ |
TO-220AB |
25000 |
只做原装进口现货,专注配单 |
|||
NEC |
23+ |
TO-220 |
35890 |
||||
RENESAS |
21+ |
TO-220F |
1625 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
RENESAS |
17+ |
TO220SMD |
23000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
2023+ |
TO220SMD |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NEC |
24+ |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
2SK3060规格书下载地址
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