isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 350V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 350V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3.5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) =5.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplif

Power MOSFET

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 235V(Min) · Static Drain-Source On-Resistance -RDS(on) =1.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Ultrahigh-Speed Switching Applications

Features • Low ON resistance. • Ultrahigh-speed switching. • 4V drive. • Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package.

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON-resistance : RDS (ON) = 0.75 Ω (typ.) ● High forward transfer admittance : |Yfs| = 7.0 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, I

Chopper Regulator, DC−DC Converter and Motor Drive Applications

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON-resistance : RDS (ON) = 0.75 Ω (typ.) ● High forward transfer admittance : |Yfs| = 7.0 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, I

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Chopper Regulator, DC−DC Converter and Motor Drive Applications

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON-resistance : RDS (ON) = 0.75 Ω (typ.) ● High forward transfer admittance : |Yfs| = 7.0 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, I

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance : |Yfs| = 5.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

MOSFET

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) =175mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) =80mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

isc N-Channel MOSFET Transistor

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Power MOSFET

isc N-Channel MOSFET Transistor

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Power MOSFET

isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

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Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件：760.66 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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N-Channel 650V (D-S) Power MOSFET

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Chopper Regulator, DC−DC Converter and Motor Drive Applications

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Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

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isc N-Channel MOSFET Transistor

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Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件：744.73 Kbytes Page：6 Pages

Chopper Regulator, DC−DC Converter and Motor Drive Applications

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isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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