Fast Switching Speed

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Fast Switching Speed

DESCRIPTION • Drain Current ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Fast Switching Speed APPLICATIONS • Switching Regulators • DC-DC Converter, • Motor Control

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Motor Control

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Motor Control Application High speed power switching

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Motor Control

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 13A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.27Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel Junction FET

For low-frequency amplification For switching ■ Features ● Low noies, high gain ● High gate to drain voltage VGDO ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

Silicon N-Channel MOS FET UHF Power Amplifier

Features · High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, hD = 50 min. (f = 836.5MHz) · Compact package capable of surface mounting

Silicon N-Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50 min. (f = 836.5 MHz) • Compact package capable of surface mounting

Silicon N-Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45min. (f = 836.5 MHz) • Compact package capable of surface mounting

Silicon N-Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45min. (f = 836.5 MHz) • Compact package capable of surface mounting

SILICON POWER MOS FIELD EFFECT TRANSISTOR

N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz) • Low intermodulation distortion • Covers all base station frequenci

N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications • Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) • High forward transfer admittance : |Yfs| = 13 S (typ.) • Low leakage current : IDSS = 100 μA (max) (VDS = 250 V) • Enhancement mode : Vth = 1.5 to 3.5 V (VDS

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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Small-signal device - Small-signal FETs - Junction FETs

Silicon N-channel junction FET

封装/外壳：SC-89，SOT-490 包装：散装 描述：JFET N-CH 30MA 125MW SSMINI-3 分立半导体产品 晶体管 - JFET

Small-signal device - Small-signal FETs - Junction FETs

封装/外壳：SC-89，SOT-490 包装：散装 描述：JFET N-CH 30MA 125MW SSMINI-3 分立半导体产品 晶体管 - JFET

Silicon N-Channel MOS FET UHF Power Amplifier

文件：145.89 Kbytes Page：10 Pages

Silicon N-Channel MOS FET UHF Power Amplifier

文件：145.89 Kbytes Page：10 Pages

Silicon N-Channel MOS FET UHF Power Amplifier

文件：145.89 Kbytes Page：10 Pages

Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件：445.02 Kbytes Page：6 Pages

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件：737.98 Kbytes Page：6 Pages

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件：737.98 Kbytes Page：6 Pages

Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件：445.02 Kbytes Page：6 Pages

丝印代码：I2PAK；isc N-Channel MOSFET Transistor

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丝印代码：D2PAK；isc N-Channel MOSFET Transistor

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Chopper Regulator, DC−DC Converter and Motor Drive

文件：432.33 Kbytes Page：6 Pages

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

文件：288.64 Kbytes Page：5 Pages

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件：721.3 Kbytes Page：6 Pages

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件：721.3 Kbytes Page：6 Pages

Chopper Regulator, DC−DC Converter and Motor Drive

文件：432.33 Kbytes Page：6 Pages