| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK2553 | Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • RDS(on)= 7 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SK2553 | Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • RDS(on)= 7 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source Application High speed power switching | RENESAS 瑞萨 | | |
2SK2553 | Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET\nHigh Speed Power Switching • Low on-resistance\n• RDS(on)= 7 mΩtyp.\n• High speed switching\n• 4 V gate drive device can be driven from 5 V sourceApplication\nHigh speed power switching; | HITACHIHitachi Semiconductor 日立日立公司 | | |
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • RDS(on)= 7 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • RDS(on)= 7 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • RDS(on)= 7 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • RDS(on)= 7 mΩtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source Application High speed power switching | RENESAS 瑞萨 | | ||
丝印代码：I2PAK；isc N-Channel MOSFET Transistor 文件：298.78 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
丝印代码：D2PAK；isc N-Channel MOSFET Transistor 文件：386.01 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFETs | RENESAS 瑞萨 | |
2SK2553产品属性
- 类型
描述
- 封装类型：
LDPAK(L)/TO-262
- Nch/Pch：
Nch
- 通道数：
Single
- VDSS (V) 最大值：
60
- ID (A)：
50
- RDS (ON)(mΩ) 最大值@4V或4.5V：
16
- RDS (ON)(mΩ) 最大值@10V或8V：
10
- Ciss (pF) 典型值：
3550
- Vgs (off) (V) 最大值：
2
- VGSS (V)：
20
- Pch (W)：
75
- 应用：
Industrial
- 安装类型：
Through Hole
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
日立 |
24+ |
TO-263 |
5000 |
全现原装公司现货 |
|||
24+ |
2000 |
||||||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS/瑞萨 |
2022+ |
TO-263 |
32500 |
原厂代理 终端免费提供样品 |
|||
HITACHI |
23+ |
NA |
1236 |
专做原装正品,假一罚百! |
|||
RENESAS/瑞萨 |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
23+ |
LDPAK(S)-(1)TO-263 |
39482 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
日立 |
25+ |
TO-263 |
27500 |
原装正品,价格最低! |
|||
hit |
25+ |
500000 |
行业低价,代理渠道 |
||||
RENESAS/瑞萨 |
20+ |
TO-263 |
32500 |
现货很近!原厂很远!只做原装 |
2SK2553芯片相关品牌
2SK2553规格书下载地址
2SK2553参数引脚图相关
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2019-10-30
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