N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)

For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
 High breakdown voltage: VGDS= −50 V
 High input impedance: IGSS= −1nA (max) (VGS= −30 V)

Silicon N Channel Junction Type For Constant Current, Impedance

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Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. FEATURES • Low On-Resistance RDS(on)1 = 80 mW MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.1 W MAX. (@ VGS = 4 V, ID = 10 A)

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. FEATURES • Low On-Resistance RDS(on)1 = 80 mΩ MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 = 0.1 Ω MAX. (@ VGS = 4 V, ID = 10 A) • Low Ciss Ciss = 1400 pF TYP. • Built-in G-S Ga

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2462 is N-Channel MOS Field Effect Transistor de signed for high current switching applications. FEATURES • Low On-Resistance RDS(on)1= 0.14 ΩMAX. (@ VGS= 10 V, ID= 8.0 A) RDS(on)2= 0.17 ΩMAX. (@ VGS= 4 V, ID= 8.0 A)

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2462 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-Resistance RDS(on)1 = 0.14 W MAX. (@ VGS = 10 V, ID = 8.0 A) RDS(on)2 = 0.17 W MAX. (@ VGS = 4 V, ID =

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT TRANSISTOR , 100V, 20A/15A

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDESCRIPTION\nThe 2SK2462 is N-Channel MOS Field Effect Transistor de signed for high current switching applications.FEATURES\n• Low On-Resistance\n   RDS(on)1= 0.14 ΩMAX. (@ VGS= 10 V, ID= 8.0 A)\n   RDS(on)2= 0.17 ΩMAX. (@ VGS= 4 V, ID= 8.0 A)\n• Low • Low On-Resistance\n   RDS(on)1= 0.14 ΩMAX. (@ VGS= 10 V, ID= 8.0 A)\n   RDS(on)2= 0.17 ΩMAX. (@ VGS= 4 V, ID= 8.0 A)\n• Low CissCiss= 790 pF TYP.\n• Built-in G-S Gate Protection Diodes\n• High Avalanche Capability Ratings;

4V Drive Nch MOSFET

为支持现有客户而生产的产品。不对新设计出售此产品。

丝印代码：T100；Small switching (60V, 2A)

● Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel.

Ultrahigh-Speed Switching Applications

Features · Low ON resistance. · Ultrahigh-speed switching. · Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 300V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel MOS-FET

Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)

For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
 High breakdown voltage: VGDS= −50 V
 High input impedance: IGSS= −1nA (max) (VGS= −30 V)

N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)

For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
 High breakdown voltage: VGDS= −50 V
 High input impedance: IGSS= −1nA (max) (VGS= −30 V)

N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)

For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
 High breakdown voltage: VGDS= −50 V
 High input impedance: IGSS= −1nA (max) (VGS= −30 V)

Silicon N Channel Junction Type For Constant Current, Impedance

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N-Channel 100-V (D-S) MOSFET

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isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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N-Channel 100-V (D-S) MOSFET

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N CHANNEL MOS TYPE(HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

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N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

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isc N-Channel MOSFET Transistor

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Silicon N Channel MOS Type High-Power Amplifier Application

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Silicon N Channel MOS Type High-Power Amplifier Application

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N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

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isc N-Channel MOSFET Transistor

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