Silicon N-Channel MOS FET

Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79

Silicon N Channel MOS FET

Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79

Power MOSFETs-MOSFETs for amplifier

Fast Switching Speed

DESCRIPTION • Drain Current ID= 15A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Fast Switching Speed APPLICATIONS • Switching regulators • General purpose power amplifier

SILICON N CHANNEL MOS TYPE

HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2157 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2158 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158 is suitable for use in low-voltage portabl

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING The 2SK2158A is an N-channel vertical type MOSFET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158A is suitable for use in lowvoltage portable s

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING The 2SK2158A is an N-channel vertical type MOSFET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158A is suitable for use in lowvoltage portable s

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING The 2SK2158A is an N-channel vertical type MOSFET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2158A is suitable for use in lowvoltage portable s

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2159 is an N-channel vertical type MOS FET featuring an operating voltage as low as 1.5 V. Because it can be driven on a low voltage and it is not necessary to consider driving current, the 2SK2159 is suitable for driving actuators of low-v

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS Field Effect Transistor

Features ● Capable of drive gate with 1.5 V ● Small RDS(on) RDS(on) = 0.7 MAX. @VGS = 1.5 V, ID = 0.1 A RDS(on) = 0.3 MAX. @VGS = 4.0 V, ID = 1.0 A

Silicon N Channel MOS FET

Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79

Very High-Speed Switching Applications

Very High-Speed Switching Applications

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