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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK1530 | NCHANNELMOSTYPE(HIGHPOWERAMPLIFIERAPPLICATION) High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  |   |
2SK1530 | High-PowerAmplifierApplication High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SK1530 | High-PowerAmplifierApplication High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SK1530 | High-PowerAmplifierApplication High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SK1530 | High-PowerAmplifierApplication High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SK1530 | BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SK1530 | iscN-ChannelMOSFETTransistor 文件：301.6 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2SK1530 | High-PowerAmplifierApplication 文件：388.89 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SK1530 | NCHANNELMOSTYPE(HIGHPOWERAMPLIFIERAPPLICATION) 文件：564.12 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
High-PowerAmplifierApplication High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
NCHANNELMOSTYPE(HIGHPOWERAMPLIFIERAPPLICATION) 文件：564.12 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
High-PowerAmplifierApplication 文件：388.89 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SK1530产品属性
- 类型
描述
- 型号
2SK1530
- 制造商
Toshiba America Electronic Components
- 功能描述
200V 12A 150W Gds Toshiba Fet TO-247Var N-Ch
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
东芝 |
1746+ |
TO3PL |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
|||
TOSHIBA |
2018+ |
TO-3P |
365000 |
TOSHIBA代理分销商绝对进口原装现货假一罚十 |
|||
TOSHIBA |
23+ |
TO-3PL |
5000 |
原装正品,假一罚十 |
|||
TOSHIBA |
2339+ |
TO-3P(L)/Out |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
TOSHIBA |
23+ |
TO-3P |
12300 |
全新原装真实库存含13点增值税票! |
|||
TOSHIBA/东芝 |
10+ |
TO-3P |
456200 |
全新原装现货 |
|||
TOSHIBA |
23+ |
TO-3PL |
9526 |
||||
TOSHIBA |
2020+ |
TO-3PL |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
NULL |
22+ |
TO-3PL |
25000 |
只做原装进口现货,专注配单 |
|||
SONY/索尼 |
2021+ |
TO3PL |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
2SK1530芯片相关品牌
2SK1530规格书下载地址
2SK1530参数引脚图相关
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2SK1530数据表相关新闻
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2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 SourceContentuid: 2SK2415-Z-E1-AZ ManufacturerPartNumber: 2SK2415-Z-E1-AZ Brand_Name: Renesas RohsCode: Yes PartLifeCycleCode: Obsolete IhsManufacturer: RENESASELECTRONICSCORP PackageDescriptio
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2019-10-30
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