Silicon N-Channel Power F-MOS FET

■ Features ● Low ON-resistance RDS(on): RDS(on) = 0.4Ω (typ.) ● High-speed switching: tf = 44ns (typ.) ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit

Silicon N-Channel Power F-MOS FET

■ ● Low ON-resistance RDS(on): RDS(on) = 0.4Ω (typ.)\n● High-speed switching: tf = 44ns (typ.)\n● No secondary breakdown\n● High breakdown voltage, large allowable power dissipation■ Applications\n● Contactless relay\n● Diving circuit for a solenoid\n● Driving circuit for a motor\n● Control equipment\;

Drain Current ?밒D=8A@ TC=25C

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