SILICON N CHANNEL POWER F MOSFET

Features ● Low ON resistance RDS(on) : RDS(0n) = 0.2Ω (typ.) ● High switching rate : td = 100ns (typ.) ● No secondary breakdown ● Low voltage drive is possible (VGS = 4V). Application ● DC-DC converter ● No contact relay ● Solenoid drive ● Motor drive

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-channel Power F-MOS FET

Silicon N-channel Power F-MOS FET

Silicon N-Channel Power F-MOS FET

isc N-Channel MOSFET Transistor

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Drain Current ?밒D=5A@ TC=25C

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Drain Current ?밒D=8A@ TC=25C

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