For Impedance Conversion In Low Frequency

Forimpedanceconversioninlowfrequency Forelectretcapacitormicrophone ■Features ●Diodeisconnectedbetweengateandsource ●Lownoisevoltage

For Impedance Conversion In Low Frequency

Forimpedanceconversioninlowfrequency Forelectretcapacitormicrophone ■Features ●Highmutualconductancegm ●LownoisevoltageofNV

For Low-Frequency Amplification

SiliconN-ChannelJunctionFET Forlow-frequencyamplification ■Features ●Highmutualconductancegm ●Lownoisetype ●Mini-typepackage,allowingdownsizingofthesetsandautomaticinsertionthroughthetape/magazinepacking.

Silicon N-Channel Junction FET

SiliconN-ChannelJunctionFET Forlow-frequencyamplification Forswitching ■Features ●Lownoies,highgain ●HighgatetodrainvoltageVGDO

Silicon N-Channel MOS FET

Forswitching ■Features ●LowON-resistanceRDS(on) ●High-speedswitching ●AllowingtobedrivendirectlybyCMOSandTTL ●Mini-powertypepackage,allowingdownsizingofthesetsandautomaticinsertionthroughthetape/magazinepacking.

For switching

Forswitching ■Features ●LowON-resistanceRDS(on) ●High-speedswitching ●AllowingtobedrivendirectlybyCMOSandTTL

Silicon N-Channel MOS FET

SiliconN-ChannelMOSFET Forswitching ■Features ●LowON-resistance ●High-speedswitching ●AllowingtobedrivendirectlybyCMOSandTTL ●Mtypepackage,allowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

For Switching

SiliconN-ChannelMOSFET Forswitching ■Features ●High-speedswitching ●Allowingtosupplywiththeradialtaping

For Switching

SiliconN-ChannelMOSFET Forswitching ■Features ●High-speedswitching ●Smalldrivecurrentowingtohighinputinpedance ●Highelectrostaticbreakdownvoltage

For Switching

Forswitching ■Features ●High-speedswitching ●Mtypepackage,allowingeasyautomaticandmanualinsertionaswellasstand-alonefixingtotheprintedcircuitboard.

Silicon N-Channel Junction FET

SiliconN-channeljunctionFET Forlow-frequencyandlow-noiseamplification ■Features •Highmutualconductancegm •Lownoisetype •SMinitypepackage,allowingdownsizingofthesetsandautomaticinsertionthroughthetape/magazinepacking

For Low-Frequency Amplification

SiliconN-ChannelJunctionFET Forlow-frequencyamplification Forswitching ■Features ●Lownoise-figure(NF) ●HighgatetodrainvoltageVGDO ●S-minitypepackage,allowingdownsizingofthesetsandautomaticinsertionthroughthetape/magazinepacking.

For Switching

SiliconMOSFETs(SmallSignal) Forswitching ■Features ●High-speedswitching ●S-minitypepackage,allowingdownsizingofthesetsandautomaticinsertionthroughthetape/magazinepacking.

Silicon MOS FETs

SiliconN-ChannelMOSFET Forswitching ■Features ●High-speedswitching ●Smalldrivecurrentowingtohighinputinpedance ●Highelectrostaticbreakdownvoltage

Field Effect Transistor

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

N-CHANNEL SILICON POWER MOSFET

Features ●HighSpeedSwitching ●Lowon-resistance ●NoSecondarybreakdown ●Lowdrivingpower ●Highvoltage ●VGSS=±30VGuarantee ●Avalance-proof Applications ●Switchingregulators ●UPS ●DC-DCconverters ●Generalpurposepoweramplifier

N-CHANNEL SILICON POWER MOSFET

Features ●HighSpeedSwitching ●Lowon-resistance ●NoSecondarybreakdown ●Lowdrivingpower ●Highvoltage ●VGSS=±30VGuarantee ●Avalance-proof Applications ●Switchingregulators ●UPS ●DC-DCconverters ●Generalpurposepoweramplifier

N-CHANNEL SILICON POWER MOSFET

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N-CHANNEL SILICON POWER MOSFET

Features ●Highspeedswitching ●Lowon-resistance ●Nosecondarybreakdown ●Lowdrivingpower ●Highvoltage ●VGSS=±30VGuarantee ●Avalanche-proof Applications ●Switchingregulators ●UPS ●DC-DCconverters ●Generalpurposepoweramplifier

Drain Current ?밒D=6A@ TC=25C

DESCRIPTION ·DrainCurrent–ID=6A@TC=25℃ ·DrainSourceVoltage-:VDSS=500V(Min) APPLICATIONS ·Designedforhighvoltage,highspeedpowerswitching

N-CHANNEL SILICON POWER MOS-FET

*Highspeedswitching *Lowon-resistance *Nosecondarybreakdown *Lowdrivingpower *Highvoltage

N-CHANNEL SILICON POWER MOSFET

N-CHANNELSILICONPOWERMOSFET

N-CHANNEL SILICON POWER MOSFET

Features ●Highspeedswitching ●Lowon-resistance ●Nosecondarybreakdown ●Lowdrivingpower ●Highvoltage ●VGSS=±30VGuarantee ●Avalanche-proof Applications ●Switching ●UPS ●DC-DCconverters ●Generalpurposepoweramplifier

POWER MOSFET

Drain Current ?밒D=15A@ TC=25C

DESCRIPTION •DrainCurrent–ID=15A@TC=25℃ •DrainSourceVoltage-:VDSS=500V(Min) APPLICATIONS •highvoltage,highspeedpowerswitching

N-CHANNEL SILICON POWER MOS-FET

Features ●Highspeedswitching ●Lowon-resistance ●Nosecondarybreakdown ●Lowdrivingpower ●Highvoltage ●VGSS=±30VGuarantee ●Avalanche-proof Applications ●Switchingregulators ●UPS ●DC-DCconverters ●Generalpurposepoweramplifier

N-CHANNEL SILICON POWER MOSFET

Features ●Highspeedswitching ●Lowon-resistance ●Nosecondarybreakdown ●Lowdrivingpower ●Highvoltage ●VGSS=±30VGuarantee ●Avalanche-proof Applications ●Switchingregulators ●UPS ●DC-DCconverters ●Generalpurposepoweramplifier

POWER MOSFET

N-CHANNELENHANCEMENTMODEPOWERMOSFET

N-CHANNEL SILICON POWER MOSFET?

Features ●Highspeedswitching ●Lowon-resistance ●Nosecondarybreakdown ●Lowdrivingpower ●Highvoltage ●VGSS=±30VGuarantee Applications ●Switchingregulators ●UPS ●DC-DCconverters ●Generalpurposepoweramplifier

N-CHANNEL SILICON POWER MOSFET?

Features ●Highspeedswitching ●Lowon-resistance ●Nosecondarybreakdown ●Lowdrivingpower ●Highvoltage ●VGSS=±30VGuarantee Applications ●Switchingregulators ●UPS ●DC-DCconverters ●Generalpurposepoweramplifier

N-CHANNEL SILICON POWER MOS-FET

[Fuji] Features ●Highspeedswitching ●Lowon-resistance ●Nosecondarybreakdown ●Lowdrivingpower ●Highvoltage ●VGSS=±30VGuarantee Applications ●Switchingregulators ●UPS ●DC-DCconverters ●Generalpurposepoweramplifier

Fast Switching Speed

DESCRIPTION •DrainCurrent–ID=3A@TC=25℃ •DrainSourceVoltage-:VDSS=800V(Min) •FastSwitchingSpeed APPLICATIONS •highvoltage,highspeedpowerswitching

N CHANNEL MOS TYPE (RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER

RFPOWERMOSFETforVHFTVBROADCASTTRANSMITTER

SILICON N CHANNEL POWER F MOSFET

Features ●LowONresistanceRDS(on):RDS(0n)=0.2Ω(typ.) ●Highswitchingrate:td=100ns(typ.) ●Nosecondarybreakdown ●Lowvoltagedriveispossible(VGS=4V). Application ●DC-DCconverter ●Nocontactrelay ●Solenoiddrive ●Motordrive

Field Effect Transistor

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

Field Effect Transistor

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

Very High-Speed Switching Applications

Features •LowON-stateresistance. •Ultrahigh-speedswitching.

Very High-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features •LowON-stateresistance. •Ultrahigh-speedswitching.

Silicon N-Channel MOS FET

2SK1056,2SK1057,2SK1058 Application Lowfrequencypoweramplifier Complementarypairwith2SJ160,2SJ161and2SJ162 Features •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharac

Silicon N Channel MOS FET

Application Lowfrequencypoweramplifier Complementarypairwith2SJ160,2SJ161and2SJ162 Features •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwith

Silicon N Channel MOS FET

Application Lowfrequencypoweramplifier Complementarypairwith2SJ160,2SJ161and2SJ162 Features •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwith

Silicon N-Channel MOS FET

2SK1056,2SK1057,2SK1058 Application Lowfrequencypoweramplifier Complementarypairwith2SJ160,2SJ161and2SJ162 Features •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharac

Silicon N Channel MOS FET

Application Lowfrequencypoweramplifier Complementarypairwith2SJ160,2SJ161and2SJ162 Features •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwith

Silicon N Channel MOS FET

Application Lowfrequencypoweramplifier Complementarypairwith2SJ160,2SJ161and2SJ162 Features •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwith

Silicon N-Channel MOS FET

2SK1056,2SK1057,2SK1058 Application Lowfrequencypoweramplifier Complementarypairwith2SJ160,2SJ161and2SJ162 Features •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharac

Silicon N Channel MOS FET

Application Lowfrequencypoweramplifier Complementarypairwith2SJ160,2SJ161and2SJ162 Features •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwith

Silicon N Channel MOS FET

Application Lowfrequencypoweramplifier Complementarypairwith2SJ160,2SJ161and2SJ162 Features •Goodfrequencycharacteristic •Highspeedswitching •Wideareaofsafeoperation •Enhancement-mode •Goodcomplementarycharacteristics •Equippedwith

CHANNEL MOS FIELD EFFECT POWER TRANSISTORS

DESCRIPTIONThe25K1059,25K1059-ZareN-ChannelMOSFieldEffectPowerTransistordesignedforsolenoid,motorandlampdriver.

CHANNEL MOS FIELD EFFECT POWER TRANSISTORS

DESCRIPTIONThe25K1059,25K1059-ZareN-ChannelMOSFieldEffectPowerTransistordesignedforsolenoid,motorandlampdriver.

N-Channel MOS FlELB EEFECT POWER TRANSISTORS

DESCRIPTIONThe2SK1060,25K1060-ZareN-ChannelMOSFieldEffectPowerTransistordesignedforsolenoid,motorandlampdriver.

N-Channel MOS FlELB EEFECT POWER TRANSISTORS

DESCRIPTIONThe2SK1060,25K1060-ZareN-ChannelMOSFieldEffectPowerTransistordesignedforsolenoid,motorandlampdriver.

N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH, INTERFACE APPLICATIONS)

HighSpeedSwitchingApplications AnalogSwitchApplications InterfaceApplications •Excellentswitchingtimes:ton=14ns(typ.) •Highforwardtransferadmittance:|Yfs|=100mS(min) •Lowonresistance:RDS(ON)=0.6Ω(typ.) •Enhancement-mode •Complementaryto2SJ

N CHANNEL MOS TYPE (HIGH SPEED SWTICHING, ANALOG SWITCHING, INTERFACE APPLICATIONS)

HighSpeedSwitchingApplications AnalogSwitchingApplications InterfaceApplications •Excellentswitchingtime:ton=14ns(typ.) •Highforwardtransferadmittance:|Yfs|=100ms(min) @ID=50mA •Lowonresistance:RDS(O

High-Frequency General-Purpose Amp Applications

High-FrequencyGeneral-PurposeAmplifierApplications Features •Ultrasmallpackagefacilitatesminiaturizationinendproducts. •SmallCrss(Crss=0.04pFtyp).

High-Frequency General-Purpose Amp Applications?

High-FrequencyGeneral-PurposeAmplifierApplications Features •Large|yfs|. •SmallCrss. •Ultralownoisefigure. •Ultrasmall-sizedpackagepermitting2SK1066-appliedsetstobemadesmallerandslimmer. Applications •High-frequencygeneral-purposeamplifier. •AMtunerRFamplifier.

FM Tuner,VHF-Band Amp Applications

FMTuner,VHF-BandAmplifierApplications Features ·LownoiseNF=1.8dBtyp(f=100MHz). ·HighpowergainPG=27dBtyp(f=100MHz). ·SmallreversetransfercapacitanceCrss=0.035pF(VDS=10V,f=1MHz). ·Ultrasmall-sizedpackage(MCP)permitting2SK1067-appliedsetstobemadesmallerandslim

Impedance Conversion Applications

ImpedanceConversionApplications Features ·SmallIGSS. ·SmallCrss. ·Ultrasmall-sizedpackagepermitting2SK1068-appliedsetstobemadesmallerandslimmer. Applications ·Impedanceconversion. ·Infraredsensor.

Low-Frequency General-Purpose Amp Applications?

N-ChannelJunctionSiliconFET Features •AdoptionofFBETprocess. •Ultrasmall-sizedpackagepermitting2SK1069-appliedsetstobemadesmallerandslimmer. Applications •Low-frequencygeneral-purposeamplifiers. •Idealforuseinvariableresistors,analogswitches,low-frequencyamplif

Silicon N-Channel Junction FET

Application Lowfrequency/Highfrequencyamplifier

Silicon N-Channel Junction FET

Application •Lowfrequency/Highfrequencyamplifier