TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV)

Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.7 S (typ.) • Low leakage current: IDSS = −100 µA (max) (VDS = −100 V) • Enhancement mode: Vt

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (P-ch single)

Polarity：P-ch\nGeneration：L²-π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available Drain current ID -16 A \nPower Dissipation PD 75 W \nDrain-Source voltage VDSS -100 V ;

Switching Regulator and DC-DC Converter Applications Motor Drive Applications

文件：185.31 Kbytes Page：6 Pages

Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications

文件：188.28 Kbytes Page：6 Pages

Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications

文件：188.28 Kbytes Page：6 Pages

Switching Regulator and DC-DC Converter Applications Motor Drive Applications

文件：185.31 Kbytes Page：6 Pages