P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

DC−DC Converter, Relay Drive and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON-resistance : RDS (ON) = 33 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 20 S (typ.) ● Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) ● Enhancement mode: Vth = −0.8 to −2.0 V (V

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -20A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.045Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET (P-ch single)

Polarity：P-ch\nGeneration：L²-π-MOSⅤ\nRoHS Compatible Product(s) (#)：Available Drain current ID -20 A \nPower Dissipation PD 35 W \nDrain-Source voltage VDSS -60 V ;

DC−DC Converter, Relay Drive and Motor Drive Applications

文件：408.15 Kbytes Page：6 Pages

DC−DC Converter, Relay Drive and Motor Drive Applications

文件：732.29 Kbytes Page：6 Pages

DC?묭C Converter, Relay Drive and Motor Drive Applications

DC−DC Converter, Relay Drive and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON-resistance : RDS (ON) = 33 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 20 S (typ.) ● Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) ● Enhancement mode: Vth = −0.8 to −2.0 V (V

DC−DC Converter, Relay Drive and Motor Drive Applications

文件：732.29 Kbytes Page：6 Pages

DC−DC Converter, Relay Drive and Motor Drive Applications

文件：408.15 Kbytes Page：6 Pages