P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION)

Audio Frequency Power Amplifier Application ● High breakdown voltage: VDSS = −180 V ● High forward transfer admittance: |Yfs| = 0.7 S (typ.) ● Complementary to 2SK2013

Audio Frequency Power Amplifier Application

Audio Frequency Power Amplifier Application ● High breakdown voltage: VDSS = −180 V ● High forward transfer admittance: |Yfs| = 0.7 S (typ.) ● Complementary to 2SK2013

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -1A@ TC=25℃ · Drain Source Voltage -VDSS= -180V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.055Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

Audio Frequency Power Amplifier Application

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