Silicon N-Channel IGBT

Application High speed power switching Features • High speed switching • Low on saturation voltage

SILICON P EMITTER PLANAR TYPE

FEATURES • High Oscillation Output Voltage : V0B1=3V (Min.) • Low Emitter Reverse Current : I EC=0.1yA (Max.) • Wide Oscillation Area : Ip=3.5yA (Max. ) (2SH20) IV=6mA (Min.)

Silicon N-Channel IGBT

Application\nHigh speed power switching •  High speed switching\n• Low on saturation voltage;