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2SD59晶体管资料
2SD59别名：2SD59三极管、2SD59晶体管、2SD59晶体三极管
2SD59生产厂家：日本三菱公司
2SD59制作材料：Si-NPN
2SD59性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SD59封装形式：直插封装
2SD59极限工作电压：100V
2SD59最大电流允许值：6A
2SD59最大工作频率：<1MHZ或未知
2SD59引脚数：2
2SD59最大耗散功率：50W
2SD59放大倍数：
2SD59图片代号：E-44
2SD59vtest：100
2SD59htest：999900
- 2SD59atest：6
2SD59wtest：50
2SD59代换 2SD59用什么型号代替：BD130,BD245C,BDV95,BDX10,BDX95,BDY20,BDY39,2N3055,2N5632,2N5633,3DD62D,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN epitaxial planer type(For low-frequency output amplification) Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A ■ Features ● Large collector power dissipation PC. ● Low collector to emitter saturation voltage VCE(sat). | Panasonic 松下 |   | ||
SILICON TRANSISTOR
| MICRO-ELECTRONICS | | ||
Medium Power Amplifiers and Switches Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
For Low-Frequency Output Amplification Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) | Panasonic 松下 | | ||
Silicon NPN epitaxial planer type(For low-frequency output amplification) Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A ■ Features ● Large collector power dissipation PC. ● Low collector to emitter saturation voltage VCE(sat). | Panasonic 松下 | | ||
SILICON TRANSISTOR
| MICRO-ELECTRONICS | | ||
Medium Power Amplifiers and Switches Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon Epitaxial Planar Transistor FEATURES ● Micro package ● Complementary to 2SB624 PNP Transistor ● High DC current gain hFE:200TYP.(VCE=1.0V,IC=100mA) APPLICATIONS ● Audio frequency general purpose amplifier applications | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
SOT-23 Plastic-Encapsulate Transistors FEATURES High DC Current gain. Complimentary to 2SB624 | DGNJDZ 南晶电子 | | ||
NPN Transistors ■ Features ● High DC Current gain. ● Complimentary to 2SB624 | YFWDIODE 佑风微 | | ||
Silicon Epitaxial Planar Transistor FEATURES ● Micro package. ● Complementary to 2SB624 PNP Transistor. ● High DC current gain hFE:200TYP.(VCE=1.0V,IC=100mA) APPLICATIONS ● Audio frequency general purpose amplifier applications. | BILIN 银河微电 | | ||
NPN Silicon Epitaxial Transistor ■ Features ● High DC Current gain. ● Complimentary to 2SB624 | KEXIN 科信电子 | | ||
TRANSISTOR (NPN) FEATURES ● High DC Current gain. ● Complimentary to 2SB624 | HTSEMI 金誉半导体 | | ||
0.7A , 30V NPN Plastic Encapsulated Transistor FEATURES • High DC Current gain • Complementary to 2SB624 | SECOS 喜可士 | | ||
Silicon Epitaxial Planar Transistor FEATURES ● Micro package ● Complementary to 2SB624 PNP Transistor ● High DC current gain hFE:200TYP.(VCE=1.0V,IC=100mA) APPLICATIONS ● Audio frequency general purpose amplifier applications | LUGUANG 鲁光电子 | | ||
TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.7 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | ||
Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package Features High hFE, complementary pair with 2SB624. Applications Audio frequency amplifier application. | FOSHAN 蓝箭电子 | | ||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● High DC Current gain. ● Complimentary to 2SB624 | JIANGSU 长电科技 | | ||
SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD | RENESAS 瑞萨 | | ||
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SD596 is designed for use in small type equipment especially recommended for hybrid integrated circuit and other applications. FEATURES • Micro package. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA) • Complementary to NEC 2SB624 PNP Transistor. | NEC 瑞萨 | | ||
SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA) | RENESAS 瑞萨 | | ||
AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD AUDIO FREQUENCY POWER AMPLIFIER FEATURES • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE= 200 TYP. (VCE= 1.0 V, IC= 100 mA) | NEC 瑞萨 | | ||
NPN Transistors ■ Features ● High DC Current gain. ● Complimentary to 2SB624 | YFWDIODE 佑风微 | | ||
NPN Transistors ■ Features ● High DC Current gain. ● Complimentary to 2SB624 | YFWDIODE 佑风微 | | ||
NPN Transistors ■ Features ● High DC Current gain. ● Complimentary to 2SB624 | YFWDIODE 佑风微 | | ||
NPN Transistors ■ Features ● High DC Current gain. ● Complimentary to 2SB624 | YFWDIODE 佑风微 | | ||
NPN Transistors ■ Features ● High DC Current gain. ● Complimentary to 2SB624 | YFWDIODE 佑风微 | | ||
SILICON TRANSISTOR | MICRO-ELECTRONICS | | ||
Si NPN Epitaxial Planar | Panasonic 松下 | | ||
Small Signal Bipolar Transistors | RENESAS 瑞萨 | | ||
Silicon Epitaxial Planar Transistor 文件：230.45 Kbytes Page：4 Pages | BILIN 银河微电 | | ||
NPN Plastic Encapsulated Transistor 文件：327.96 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 文件：298.88 Kbytes Page：2 Pages | RECTRON 丽正国际 | | ||
Silicon Epitaxial Planar Transistor 文件：230.45 Kbytes Page：4 Pages | BILIN 银河微电 | | ||
NPN Plastic Encapsulated Transistor 文件：327.96 Kbytes Page：3 Pages | SECOS 喜可士 | | ||
NPN Transistors 文件：1.31057 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
NPN TRANSISTOR 文件：142.24 Kbytes Page：1 Pages | WINNERJOIN 永而佳 | | ||
NPN Transistors 文件：1.37783 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
NPN Transistors 文件：1.37783 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
NPN Transistors 文件：1.37783 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
NPN Transistors 文件：1.37783 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
NPN Transistors 文件：1.37783 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
NPN Transistors 文件：1.37783 Mbytes Page：2 Pages | KEXIN 科信电子 | | ||
isc Silicon NPN Darlington Power Transistor 文件：266.66 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SD59产品属性
- 类型
描述
- 型号
2SD59
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-3 100V 6A 50W BEC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASON/松下 |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PANASONIC |
23+ |
TO92 |
20000 |
全新原装假一赔十 |
|||
PANASONIC/松下 |
25+ |
TO92 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
长电/长晶 |
21+ |
SOT-23 |
15000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
JXK/杰信科 |
23+ |
TO-92 |
1999998 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
N/A |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
Bychip/百域芯 |
21+ |
SOT-23 |
30000 |
实单必成 质强价优 可开13点增值税 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
PANASONIC |
24+ |
TO-92 |
4880 |
||||
NEC |
23+ |
SOT-23 |
30000 |
原装正品,假一罚十 |
2SD59规格书下载地址
2SD59参数引脚图相关
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- 5000
- 4921
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- 4735
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- 3q1
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- 3579
- 35001
- 3477
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- 303c
- 2SD613
- 2SD612K
- 2SD612
- 2SD610
- 2SD608
- 2SD605(D)
- 2SD605
- 2SD604
- 2SD603
- 2SD602A
- 2SD602
- 2SD601S
- 2SD601R
- 2SD601Q
- 2SD601A
- 2SD601
- 2SD600K
- 2SD600
- 2SD60
- 2SD599
- 2SD598
- 2SD597
- 2SD596A
- 2SD596
- 2SD594
- 2SD593
- 2SD592A(ANC)
- 2SD592A
- 2SD592(NC)
- 2SD592
- 2SD591
- 2SD590
- 2SD589
- 2SD588(A)
- 2SD587(A)
- 2SD586(A)
- 2SD585
- 2SD583
- 2SD582A
- 2SD582(A)
- 2SD582
- 2SD581(A)
- 2SD581
- 2SD580
- 2SD58
- 2SD579A
- 2SD579
- 2SD578A
- 2SD578
- 2SD577
- 2SD576
- 2SD575L
- 2SD575
- 2SD574(A)
- 2SD573
- 2SD571
- 2SD5703
- 2SD5702
- 2SD570
- 2SD569
- 2SD568
- 2SD560
- 2SD557
- 2SD556
- 2SD555
- 2SD554
- 2SD553
- 2SD552
- 2SD551
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2019-2-15
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