SILICON NPN EPITAXIAL DARLINGTON TRANSISTOR (5 AMP, 100 VOLT)

The 2SD560 is a low cost Darlington array which is perfectly suited for increasing TTL levels to drvie print hammers, solenolds or motors.

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type 2SB601 APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB601 ·DARLINGTON APPLICATIONS ·Low frequency power amplifier ·Low speed switching industrial use

NPN Silicon Power Ttransistors

DESCRIPTION The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers, and PC terminals.