SILICON NPN EPITAXIAL DARLINGTON TRANSISTOR (5 AMP, 100 VOLT)

The 2SD560 is a low cost Darlington array which is perfectly suited for increasing TTL levels to drvie print hammers, solenolds or motors.

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type 2SB601 APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB601 ·DARLINGTON APPLICATIONS ·Low frequency power amplifier ·Low speed switching industrial use

NPN Silicon Power Ttransistors

DESCRIPTION The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers, and PC terminals.

Silicon NPN Darlington Power Transistor

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of dev

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector Current:: IC= 7A • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A • Complement to Type 2SB707 APPLICATIONS • Designed for low-frequency power amplifiers and low-speed switching applications.

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector Current:: IC= 7A • Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 5A • Complement to Type 2SB708 APPLICATIONS • Designed for low-frequency power amplifiers and low-speed switching applications.

SILICON NPN EPITAXIAL DARLINGTON TRANSISTOR (5 AMP/ 100 VOLT)

Trans Darlington NPN 100V 5A 3-Pin(3+Tab) TO-220AB

功率三极管