Color TV Horizontal Deflection Output Applications

NPN Triple Diffused Planar Silicon Transistor Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

丝印代码：EW；General purpose amplification (12V, 1.5A)

Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤ 200mV At IC = 500mA / IB = 25mA Application Low frequency amplifier

Low VCE(sat) Transistor

根据市场需求，提供从超小型到功率型的封装，以节能高可靠性为开发理念的多种产品线。 Low VCE(sat)晶体管;

Low frequency amplifier

Features 1) Collector current is large. 2) VCE(sat)≦ 180mV at IC= 1A / IB= 50mA 3) Complementary PNP Types : 2SB1690 Application LOW FREQUENCY AMPLIFIER

丝印代码：FW；Low frequency amplifier

Features 1) A collector current is large. 2) VCE(sat) ≤ 180mV At IC = 1A / IB = 50mA Application Low frequency amplifier Driver

NPN 150mA 50V Muting Transistors

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

General Purpose Transistor (50V, 0.15A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

丝印代码：BJ；General purpose Transistor (50V, 150mA)

Features 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. 　 (Max.VCE(sat)=300mV at IC/IB=50/5mA) Application LOW FREQUENCY AMPLIFIER, DRIVER

General purpose Transistor (50V, 150mA)

Features 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. 　 (Max.VCE(sat)=300mV at IC/IB=50/5mA) Application LOW FREQUENCY AMPLIFIER, DRIVER

Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair with 2S

Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair with 2S

丝印代码：EU；General purpose amplification (30V, 1A)

Features 1) A collector current is large 2) Collector-Emitter saturation voltage is low. VCE(sat)≦350mV at IC=500mA /IB=25mA Application LOW FREQUENCY AMPLIFIER, DRIVER

NPN 1A 30V Low Frequency Amplifier Transistors

Features 1) A collector current is large 2) Collector-Emitter saturation voltage is low. VCE(sat)≦350mV at IC=500mA /IB=25mA Application LOW FREQUENCY AMPLIFIER, DRIVER

Low frequency amplifier

Features 1) Collector current is large. 2) VCE(sat)≦ 350mV at IC= 1A / IB= 50mA 3) Complementary PNP Types : 2SB1695 Application LOW FREQUENCY AMPLIFIER

丝印代码：FZ；Low frequency amplifier

Features 1) A collector current is large. 2) VCE(sat) ≤ 350mV At IC = 1A / IB = 50mA Application Low frequency amplifier Driver

Low frequency amplifier

Features 1) A collector current is large. 2) VCE(sat) ≤ 350mV At IC = 1A / IB = 50mA Application Low frequency amplifier Driver

Silicon NPN Epitaxial High Voltage Amplifier

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Silicon NPN Epitaxial High Voltage Amplifier

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Silicon NPN Epitaxial High Voltage Amplifier

Transistor-Bipolar Small Signal Transistors

Silicon NPN Epitaxial High Voltage Amplifier

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丝印代码：TL；Low frequency amplifier

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Low frequency amplifier

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 12V 2A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：SC-96 包装：卷带（TR） 描述：TRANS NPN 12V 2A TSMT 3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

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Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

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Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

文件：107.75 Kbytes Page：7 Pages

Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

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Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

文件：107.75 Kbytes Page：7 Pages

Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

文件：107.75 Kbytes Page：7 Pages

丝印代码：EU；NPN 1A 30V Low Frequency Amplifier Transistors

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NPN 1A 30V Low Frequency Amplifier Transistors

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NPN 1A 30V Low Frequency Amplifier Transistors

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Low frequency amplifier

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Low frequency amplifier

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2SD2685LS

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For Power Switching

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