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2SD246晶体管资料
2SD246别名:2SD246三极管、2SD246晶体管、2SD246晶体三极管
2SD246生产厂家:日本松下公司
2SD246制作材料:Si-NPN
2SD246性质:电视 (TV)_行输出 (HA)
2SD246封装形式:直插封装
2SD246极限工作电压:1.5KV
2SD246最大电流允许值:4.5A
2SD246最大工作频率:<1MHZ或未知
2SD246引脚数:2
2SD246最大耗散功率:25W
2SD246放大倍数:
2SD246图片代号:E-44
2SD246vtest:1500
2SD246htest:999900
- 2SD246atest:4.5
2SD246wtest:25
2SD246代换 2SD246用什么型号代替:BDX31,BDX32,BU108,BU208,BU208A,BU209,BU209A,BU508,BU508A,BUY71,2SC2928,3DD255F,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN epitaxial planer type(For low-frequency output amplification) ■ Features ● High foward current transfer ratio hFE. ● Low collector to emitter saturation voltage VCE(sat). ● Allowing supply with the radial taping | Panasonic 松下 | |||
NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) | TOSHIBA 东芝 | |||
NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) • Complementary to 2SB1602 | TOSHIBA 东芝 | |||
SILICON TRANSISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with onchip dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as mot | RENESAS 瑞萨 | |||
Silicon NPN epitaxial planar type(For low-voltage switching) ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package superior in insulation, which can be installed to the heat sink with one screw | Panasonic 松下 | |||
Silicon NPN epitaxial planar type(For low-voltage switching) ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw | Panasonic 松下 | |||
Silicon NPN epitaxial planar type(For low-voltage switching) ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw | Panasonic 松下 | |||
Silicon NPN epitaxial planar type(For power switching) ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw | Panasonic 松下 | |||
Silicon NPN epitaxial planar type(For power switching) ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw | Panasonic 松下 | |||
Silicon PNP epitaxial planar type(For power switching) For power switching Complementary to 2SD2469 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the heat sink w | Panasonic 松下 | |||
Silicon NPN epitaxial planar type(For power switching) ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw | Panasonic 松下 | |||
Silicon NPN epitaxial planar type(For power switching) ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw | Panasonic 松下 | |||
Power Amplifier Applications 文件:135.06 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Power transistor for low frequency applications | TOSHIBA 东芝 | |||
Power Amplifier Applications 文件:135.06 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Power Amplifier Applications 文件:135.01 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications | TOSHIBA 东芝 | |||
Power Amplifier Applications 文件:135.01 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Transistor-Bipolar Power Transistors | RENESAS 瑞萨 |
2SD246产品属性
- 类型
描述
- 型号
2SD246
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-3 1500V 4.5A 16W BEC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
NA/ |
475 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
UTC/友顺 |
23+ |
SOT-89 |
50000 |
原装正品 支持实单 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
PANASONIC |
25+ |
TO-TO-220F |
35400 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
UTC/友顺 |
25+ |
TO-92SP |
880000 |
明嘉莱只做原装正品现货 |
|||
MAT |
23+ |
TO-220F |
33888 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
PANASONIC |
25+ |
SOT-89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
24+ |
TO-3 |
10000 |
全新 |
||||
UTC(友顺) |
23+ |
TO-92SP |
8917 |
三极管/MOS管/晶体管 > 三极管(BJT) |
|||
UTC/友顺 |
24+ |
SOT-89 |
9600 |
原装现货,优势供应,支持实单! |
2SD246规格书下载地址
2SD246参数引脚图相关
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- 2SD2466
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- 2SD2462
- 2SD2461
- 2SD2460
- 2SD2459
- 2SD2458
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- 2SD2439
- 2SD2438
- 2SD2437
- 2SD2426
- 2SD2425
- 2SD2423
- 2SD2422
- 2SD2420
- 2SD2416
- 2SD2414
- 2SD2413
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2019-2-15
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