Silicon NPN epitaxial planer type(For low-frequency output amplification)

■ Features ● High foward current transfer ratio hFE. ● Low collector to emitter saturation voltage VCE(sat). ● Allowing supply with the radial taping

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA)

Power transistor for low frequency applications

Polarity：NPN\nRoHS Compatible Product(s) (#)：Available Collector Current IC 2 A \nCollector-emitter voltage VCEO 60 V ;

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) • Complementary to 2SB1602

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with onchip dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as mot

Silicon NPN epitaxial planar type(For low-voltage switching)

■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package superior in insulation, which can be installed to the heat sink with one screw

Silicon NPN epitaxial planar type(For low-voltage switching)

■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Silicon NPN epitaxial planar type(For low-voltage switching)

■ Features ● Low collector to emitter saturation voltage VCE(sat) ● High-speed switching ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Silicon NPN epitaxial planar type(For power switching)

■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Silicon NPN epitaxial planar type(For power switching)

■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Silicon PNP epitaxial planar type(For power switching)

For power switching Complementary to 2SD2469 ■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the heat sink w

Silicon NPN epitaxial planar type(For power switching)

■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Silicon NPN epitaxial planar type(For power switching)

■ Features ● Low collector to emitter saturation voltage VCE(sat) ● Satisfactory linearity of foward current transfer ratio hFE ● Large collector current IC ● Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw

Power Amplifier Applications

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Power Amplifier Applications

文件：135.06 Kbytes Page：5 Pages

Power Amplifier Applications

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Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications

Power Amplifier Applications

文件：135.01 Kbytes Page：5 Pages

Transistor-Bipolar Power Transistors