TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SB1569 ·High transition frequency ·Collector power dissipation: PC=20W(TC=25℃) APPLICATIONS ·For low frequency power amplifier applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SB1569 ·High transition frequency ·Collector power dissipation: PC=20W(TC=25
) APPLICATIONS ·For low frequency power amplifier applications

POWER TRANSISTOR

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570) Application : Audio, Series Regulator and General Purpose

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SB1570 ·DARLINGTON APPLICATIONS ·Audio, series regulator and general purpose applications

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SB1570 ·DARLINGTON APPLICATIONS ·Audio, series regulator and general purpose applications

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With MT-200 package ·Complement to type 2SB1570 ·DARLINGTON APPLICATIONS ·Audio, Series Regulator and General Purpose

NPN Silicon Epitaxia

■ Features ● High current capacitance ● Low collector saturation voltage ● Complementary to 2SB1571

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES • High current capacitance • Low collector s

Old Company Name in Catalogs and Other Documents

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES • High current capacitance • Low collector s

Old Company Name in Catalogs and Other Documents

The 2SD2403 is a transistor featuring high current capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES • High current capacitance • Low collector saturation voltage • Complementary transistor with 2SB1572

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

The 2SD2403 is a transistor featuring high current capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES • High current capacitance • Low collector saturation voltage • Complementary transistor with 2SB1572

NPN Silicon Epitaxia

■ Features ● High current capacitance ● Low collector saturation voltage ● Complementary to 2SB1572

Plastic-Encapsulate Transistor

Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-223 case with the type designation PZT2403

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • Collector Power Dissipation- : PC= 25W@ TC= 25℃ • Good Linearity of hFE APPLICATIONS • Designed for power amplifier applications.

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High power dissipation: PC = 25 W (Tc = 25°C) • Good hFE linearity

Power Amplifier Applications

Power Amplifier Applications • High power dissipation: PC = 25 W (Tc = 25°C) • Good hFE linearity

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES High collector to base voltage VCBO High collector to emitter voltage VCEO Large collector power dissipation PC Low collector to emitter saturation voltage VCE(sat)

Silicon NPN triple diffusion planer type(For low-frequency output amplification)

■ Features ● High collector to base voltage VCBO. ● High collector to emitter voltage VCEO. ● Large collector power dissipation PC. ● Low collector to emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape

NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)

High Current Switching Applications Power Amplifier Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A)

Silicon NPN Triple Diffused Type

Features ● Low Saturation Voltage:VCE(sat)=0.5V(Max.)(at IC=4A)

Silicon NPN epitaxial planer type darlington(For low-frequency amplification)

■ Features ● High foward current transfer ratio hFE. ● 60V zener diode built in between collector and base. ● Darlington connection. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon NPN triple diffusion planer type Darlington(For power amplification)

■ Features • High forward current transfer ratio hFE: 2 000 to 10 000 • Dielectric breakdown voltage of the package: > 5 kV

Silicon NPN Epitaxial, Darlington

Application Low frequency power amplifier Features • The transistor with a built–in zener diode of surge absorb.

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES • New package with dimensions in between those

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. This transistor is ideal for DC/DC converters and motor drivers. FEATURES • New package with dimensions in betwee

Driver Applications?????????

80V/2A Driver Applications Features • Darlington connection. • High DC current gain. Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

Silicon NPN Darlington Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SB1587 APPLICATIONS ·Audio, series regulator and general purpose

Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)

Complement to type 2SB1587 Application : Audio, Series Regulator and General Purpose

Silicon NPN Darlington Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SB1587 APPLICATIONS ·Audio, series regulator and general purpose

Silicon NPN Darlington Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SB1587 APPLICATIONS ·Audio, Series Regulator and General Purpose

Silicon NPN Darlington Power Transistors

Silicon NPN Darlington Power Transistors DESCRIPTION ·With TO-3PML package ·Complement to type 2SB1588 APPLICATIONS ·Audio ,regulator and general purpose

Silicon NPN Darlington Power Transistors

Silicon NPN Darlington Power Transistors DESCRIPTION ·With TO-3PML package ·Complement to type 2SB1588 APPLICATIONS ·Audio ,series regulator and general purpose applications

Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588) Application : Audio, Series Regulator and General Purpose

Silicon NPN Darlington Power Transistors

Silicon NPN Darlington Power Transistors DESCRIPTION ·With TO-3PML package ·Complement to type 2SB1588 APPLICATIONS ·Audio ,series regulator and general purpose applications

NPN TRIPLE DIFFUSED TYPE (SWITHCING APPLICATIONS)

Switching Application High breakdown voltage: VCBO = 100 V : VEBO = 18 V Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 5 A, IB = 1 A) High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A) High DC current gain: hFE = 200 (min) (VCE = 5 V, IC

Silicon NPN epitaxial planer type(For low-frequency output amplification)

Silicon NPN epitaxial planer type For low-frequency output amplification ■ Features ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon NPN Epitaxial Planar Type

Features ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Power Transistor (15V, 1A)

Features 1) Low saturation voltage, VCE(sat)=0.3V(Max.) at IC/IB=400mA/20mA 2) IC=1A. 3) Complements the 2SB1590K. Application LOW FREQUENCY POWER AMPLIFIER

Power Transistor

Features ● IC = 1A. ● Low saturation voltage.

Power Transistor (15V,1A)

Features 1)Low saturation voltage, 　 VCE(sat)=0.3V(Max.) at IC/IB=400mA/20mA 2)IC=1A. 3)Complements the 2SB1590K. Application LOW FREQUENCY POWER AMPLIFIER

Power Transistor (15V,1A)

Features 1)Low saturation voltage, 　 VCE(sat)=0.3V(Max.) at IC/IB=400mA/20mA 2)IC=1A. 3)Complements the 2SB1590K. Application LOW FREQUENCY POWER AMPLIFIER

Power Transistor (15V,1A)

Features 1)Low saturation voltage, 　 VCE(sat)=0.3V(Max.) at IC/IB=400mA/20mA 2)IC=1A. 3)Complements the 2SB1590K. Application LOW FREQUENCY POWER AMPLIFIER

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 160V(Min) ·High DC Current Gain-: hFE= 3000( Min.) @(IC= 8A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max)@ (IC= 8A, IB= 8mA) B ·Complement to Type 2SB1594 APPLICATIONS ·Designed for power amplifie

TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE

Power Amplifier Applications ● High breakdown voltage: VCEO = 160 V (min) ● Complementary to 2SB1594

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For high current transfer ratio and power amplification ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

Silicon NPN Triple Diffusion Planar Type

Features ● High forward current transfer ratio hFE. ● Low collector-emitter saturation voltage VCE(sat).

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage ;high speed • Low saturation voltage • Built-in damper diode APPLICATIONS • Horizontal deflection output for color TV

Silicon NPN Power Transistors

DESCRIPTION • With TO-3P(H)IS package • High voltage ;high speed • Low saturation voltage • Built-in damper diode APPLICATIONS • Horizontal deflection output for color TV

Silicon PNP epitaxial planer type(For power amplification)

Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon NPN Epitaxial Planar Type

■ Features ● High collector to emitter voltage VCEO. ● Large collector power dissipation PC. ● Complementary to 2SB1599

Silicon NPN epitaxial planer type(For low-frequency power amplification)

Silicon NPN epitaxial planer type For low-frequency power amplification ■ Features ● High collector to emitter voltage VCEO. ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazin

Silicon NPN epitaxial planer type(For low-frequency output amplification)

Silicon NPN epitaxial planer type For low-frequency output amplification ■ Features ● High collector to emitter voltage VCEO. ● Low collector to emitter saturation voltage VCE(sat). ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the t

Silicon NPN epitaxial planer type

Features ● High collector to emitter voltage VCEO. ● Low collector to emitter saturation voltage VCE(sat).

Silicon NPN epitaxial planer type(For low-frequency output amplification)

■ Features ● High foward current transfer ratio hFE. ● Low collector to emitter saturation voltage VCE(sat). ● Allowing supply with the radial taping

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA)

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) • Complementary to 2SB1602

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with onchip dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as mot