2SD238晶体管资料

  • 2SD238别名:2SD238三极管、2SD238晶体管、2SD238晶体三极管

  • 2SD238生产厂家:日本三肯公司

  • 2SD238制作材料:Si-NPN

  • 2SD238性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SD238封装形式:直插封装

  • 2SD238极限工作电压:110V

  • 2SD238最大电流允许值:1.5A

  • 2SD238最大工作频率:<1MHZ或未知

  • 2SD238引脚数:2

  • 2SD238最大耗散功率:10W

  • 2SD238放大倍数

  • 2SD238图片代号:E-8

  • 2SD238vtest:110

  • 2SD238htest:999900

  • 2SD238atest:1.5

  • 2SD238wtest:10

  • 2SD238代换 2SD238用什么型号代替:BD239C,BD241C,BD581,BD939,2N3054,2SD381,2SD382,3DK204C,

2SD238价格

参考价格:¥8.6255

型号:2SD2389 品牌:Sanken 备注:这里有2SD238多少钱,2025年最近7天走势,今日出价,今日竞价,2SD238批发/采购报价,2SD238行情走势销售排行榜,2SD238报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Power Transistor

Power Transistor

Sanken

三垦

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING

DESCRIPTION The 2SD2383 is an element realizing high voltage in small dimension. This transistor is ideal for downsizing sets requiring high voltage. FEATURES • High voltage • Small dimension

NEC

瑞萨

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING

RENESAS

瑞萨

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= 6A ·Complement to Type 2SB1555 APPLICATIONS ·Designed for power amplifier applications

ISC

无锡固电

NPN TRIPLI DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1555

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications  High breakdown voltage: VCEO= 140 V (min)  Complementary to 2SB1556

TOSHIBA

东芝

isc Silicon NPN Darlington Power Transistor

Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= 7A ·Complement to Type 2SB1556 APPLICATIONS ·Designed for power amplifier applications

ISC

无锡固电

NPN TRIPLI DIFFUSED TYPE ( POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1557

TOSHIBA

东芝

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SB1557 • High breakdown voltage:VCEO=140V(Min) APPLICATIONS • Power amplifier applications

SAVANTIC

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SB1557 • High breakdown voltage:VCEO=140V(Min) APPLICATIONS • Power amplifier applications

ISC

无锡固电

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SB1558

TOSHIBA

东芝

Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)

Complement to type 2SB1559 Application : Audio, Series Regulator and General Purpose

Sanken

三垦

Silicon NPN Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SB1559 ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose

SAVANTIC

Silicon NPN Darlington Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type 2SB1559 ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose

ISC

无锡固电

封装/外壳:TO-220-3 整包 包装:卷带(TR) 描述:TRANS NPN DARL 65V 6A TO220F 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Sanken

三垦

Transistor-Bipolar Power Transistors

RENESAS

瑞萨

Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) Power Amplifier Applications

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

TOSHIBA

东芝

Silicon NPN Darlington Power Transistors

文件:127.97 Kbytes Page:3 Pages

SAVANTIC

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

文件:88.13 Kbytes Page:2 Pages

ROHM

罗姆

TRANSISTORS TO 92L TO-92LS MRT

文件:195.39 Kbytes Page:2 Pages

ROHM

罗姆

Silicon NPN Darlington Power Transistors

文件:176.33 Kbytes Page:4 Pages

SAVANTIC

封装/外壳:TO-3P-3,SC-65-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN DARL 150V 8A TO3P 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Sanken

三垦

Silicon NPN Triple Diffused Planar Transistor

文件:34.36 Kbytes Page:1 Pages

Sanken

三垦

Silicon NPN Triple Diffused Planar Transistor

文件:33.89 Kbytes Page:1 Pages

Sanken

三垦

2SD238产品属性

  • 类型

    描述

  • 型号

    2SD238

  • 制造商

    Toshiba America Electronic Components

更新时间:2025-12-25 16:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANKEN
24+
TO247
39197
郑重承诺只做原装进口现货
SANKEN
17+
TO247
6200
100%原装正品现货
TOSHIBA
24+
TO-220
3200
只做原装正品现货 欢迎来电查询15919825718
TOSHIBA/东芝
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SANKEN(三垦)
25+
TO-3P
500000
源自原厂成本,高价回收工厂呆滞
SANKEN
22+
TO-3P
20000
公司只有原装 品质保证
SANKEN/三垦
25+
TO-3P
54648
百分百原装现货 实单必成 欢迎询价
SANKEN
TO247
53650
一级代理 原装正品假一罚十价格优势长期供货
TOSHIBA/东芝
23+
TO-3P
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
SANKEN/三垦
24+
TO-3P
990000
明嘉莱只做原装正品现货

2SD238数据表相关新闻