Silicon NPN triple diffusion planar type Darlington(For power amplification)

For power amplification Complementary to 2SB1503 ■ Features • Optimum for 110 W Hi-Fi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

Silicon PNP epitaxial planar type Darlington(For power amplification)

For power amplification Complementary to 2SD2276 ■ Features ● Optimum for 110W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) B ·Complement to Type 2SB1503 APPLICATIONS ·Designe