Silicon NPN epitaxial planer type

For high breakdown voltage low-frequency and low-noise amplification ■Features ● High collector to emitter voltage VCEO. ● Low noise voltage NV. ● SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification Complementary to 2SD2240 ■ Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through t

Silicon NPN epitaxial planer type

For high breakdown voltage low-frequency and low-noise amplification ■Features ● High collector to emitter voltage VCEO. ● Low noise voltage NV. ● SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High DC current gain : hFE=2000 (Min) • Low saturation voltage • Complement to type 2SB1481 • DARLINGTON APPLICATIONS • With switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High DC current gain : hFE=2000 (Min) • Low saturation voltage • Complement to type 2SB1481 • DARLINGTON APPLICATIONS • With switching applications

NPN EPITAXIAL TYPE (SWITCHING APPLICATIONS)

Switching Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type Darlington For power amplification ■ Features • High forward current transfer ratio hFE • High-speed switching • Allowing supply with the radial taping

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type Darlington For power amplification ■ Features • High forward current transfer ratio hFE • High-speed switching • Allowing supply with the radial taping

Silicon NPN Epitaxial

Application Low frequency amplifier

Silicon NPN Epitaxial

Application Low frequency amplifier

Silicon NPN epitaxial planer type(For low-frequency power amplification)

Silicon NPN epitaxial planar type For low-frequency power amplification ■Features •Low collector-emitter saturation voltage VCE(sat) •Satisfactory operation performances at high efficiency with the low voltage power supply. •Allowing supply with the radial taping

Silicon NPN epitaxial planar type

Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires

TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS

Switching Applications

文件：137.33 Kbytes Page：4 Pages

Silicon NPN Power Transistors

文件：284.96 Kbytes Page：5 Pages

Switching Applications

文件：137.33 Kbytes Page：4 Pages

封装/外壳：3-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 60V 4A MT-4 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN EPITAXIAL TYPE (HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS FOR INDUCTIVE LOAD DRIVE)

文件：106.39 Kbytes Page：2 Pages

封装/外壳：3-SIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 5A MT-2 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个