2SD222晶体管资料

  • 2SD222别名:2SD222三极管、2SD222晶体管、2SD222晶体三极管

  • 2SD222生产厂家:日本三肯公司

  • 2SD222制作材料:Si-NPN

  • 2SD222性质:低频或音频放大 (LF)_开关管 (S)

  • 2SD222封装形式:直插封装

  • 2SD222极限工作电压:40V

  • 2SD222最大电流允许值:1.5A

  • 2SD222最大工作频率:<1MHZ或未知

  • 2SD222引脚数:3

  • 2SD222最大耗散功率:10W

  • 2SD222放大倍数

  • 2SD222图片代号:E-36

  • 2SD222vtest:40

  • 2SD222htest:999900

  • 2SD222atest:1.5

  • 2SD222wtest:10

  • 2SD222代换 2SD222用什么型号代替:BD135,BD226,BD233,BD375,BD575,BD585,3DA21A,

2SD222价格

参考价格:¥0.7459

型号:2SD2226KT146V 品牌:Rohm 备注:这里有2SD222多少钱,2025年最近7天走势,今日出价,今日竞价,2SD222批发/采购报价,2SD222行情走势销售排行榜,2SD222报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN triple diffusion planar type Darlington(For low-frequency amplification)

Silicon NPN triple diffusion planar type Darlington For low-frequency amplification ■ Features ● Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward current transfer ratio hFE ● A shunt resistor is omitted f

Panasonic

松下

Silicon NPN triple diffusion planar type Darlington(For power amplification)

For power amplification Complementary to 2SB1470 ■Features •Optimum for 120 W Hi-Fi output •High forward current transfer ratio hFE •Low collector-emitter saturation voltage VCE(sat)

Panasonic

松下

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1470 ·High DC current gain ·Low saturation voltage VCE(sat) ·DARLINGTON APPLICATIONS ·For power amplification

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1470 ·High forward current transfer ratio hFE ·Low saturation voltage VCE(sat) ·DARLINGTON APPLICATIONS ·For power amplification

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1470 ·High DC current gain ·Low saturation voltage VCE(sat) ·DARLINGTON APPLICATIONS ·For power amplification

SAVANTIC

Driver Applications????

Features • Suitable for sets whose height is restricted. • High DC current gain. • Large current capacity and wide ASO. Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

SANYO

三洋

Driver Applications????

Driver Applications Features • Suitable for sets whose height is restricted. • High DC current gain. • Large current capacity and wide ASO. Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

SANYO

三洋

Silicon NPN epitaxial planer type(For low-frequency amplification)

For low-frequency amplification Complementary to 2SB1473 ■Features ● High collector to emitter voltage VCEO of 120V. ● Optimum for low-frequency driver amplification. ● Allowing supply with the radial taping.

Panasonic

松下

General Purpose Transistor (50V, 0.15A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

ROHM

罗姆

NPN 150mA 50V Muting Transistors

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

ROHM

罗姆

MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

MEDIUM POWER TRANSISTOR(25V, 1.2V) GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

ROHM

罗姆

General Purpose Transistor

Features ● High DC current gain. ● High emitter-base voltage. ● Low saturation voltage.

KEXIN

科信电子

MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

MEDIUM POWER TRANSISTOR(25V, 1.2V) GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

ROHM

罗姆

General Purpose Transistor (50V, 0.15A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

ROHM

罗姆

NPN SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER

DESCRIPTION The 2SD2228 is designed for general-purpose applicatons requiring High DC Current and Low Collector Saturation Voltage. This is suitable for appliances including VCR cameras and headphone stereos.

NEC

瑞萨

SILICON TRANSISTOR

NPN SILICON EPTAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER

RENESAS

瑞萨

NPN Silicon Epitaxia

Features ● High dc current. ● Low collector saturation voltage.

KEXIN

科信电子

Silicon NPN Power Transistors

文件:115.68 Kbytes Page:3 Pages

SAVANTIC

Power Device - Power Transistors - Others

Panasonic

松下

Silicon NPN Power Transistors

文件:89.18 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:89.18 Kbytes Page:3 Pages

JMNIC

锦美电子

NPN Epitaxial Planar Silicon Transistors Driver Applications

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Transistors Driver Applications

ONSEMI

安森美半导体

封装/外壳:3-SIP 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 120V 0.5A MT-2 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Panasonic

松下

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 0.15A SMT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ROHM

罗姆

2SD222产品属性

  • 类型

    描述

  • 型号

    2SD222

  • 功能描述

    TRANS NPN 80VCEO 1A MT-3

  • RoHS

  • 类别

    分离式半导体产品 >> 晶体管(BJT) - 单路

  • 系列

    -

  • 标准包装

    1

  • 系列

    -

  • 晶体管类型

    NPN 电流 -

  • 集电极(Ic)(最大)

    1A 电压 -

  • 集电极发射极击穿(最大)

    30V

  • Ib、Ic条件下的Vce饱和度(最大)

    200mV @ 100mA,1A 电流 -

  • 集电极截止(最大)

    100nA 在某 Ic、Vce

  • 时的最小直流电流增益(hFE)

    300 @ 500mA,5V 功率 -

  • 最大

    710mW 频率 -

  • 转换

    100MHz

  • 安装类型

    表面贴装

  • 封装/外壳

    TO-236-3,SC-59,SOT-23-3

  • 供应商设备封装

    SOT-23-3(TO-236)

  • 包装

    Digi-Reel®

  • 其它名称

    MMBT489LT1GOSDKR

更新时间:2025-12-25 18:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
24+
NA/
6122
原装现货,当天可交货,原型号开票
ROHM
24+
SOT-23
4000
只做原装正品现货 欢迎来电查询15919825718
ROHM/罗姆
22+
SOT-23
20000
只做原装
ROHM
NA
185600
一级代理 原装正品假一罚十价格优势长期供货
ROHM
NEW
SOT23
11092
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
ROHM
25+
SOT-23
2150
百分百原装正品 真实公司现货库存 本公司只做原装 可
ROHM
99+
SOT23/SOT323
2900
全新原装进口自己库存优势
ROHM
21+
SOT-346
21000
一级代理进口原装!长期供应!绝对优势价格(诚信经营
ROHM/罗姆
22+
SC-59-3
12245
现货,原厂原装假一罚十!
ROHM
23+
NA
1596
专做原装正品,假一罚百!

2SD222数据表相关新闻