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2SD222晶体管资料

  • 2SD222别名:2SD222三极管、2SD222晶体管、2SD222晶体三极管

  • 2SD222生产厂家:日本三肯公司

  • 2SD222制作材料:Si-NPN

  • 2SD222性质:低频或音频放大 (LF)_开关管 (S)

  • 2SD222封装形式:直插封装

  • 2SD222极限工作电压:40V

  • 2SD222最大电流允许值:1.5A

  • 2SD222最大工作频率:<1MHZ或未知

  • 2SD222引脚数:3

  • 2SD222最大耗散功率:10W

  • 2SD222放大倍数

  • 2SD222图片代号:E-36

  • 2SD222vtest:40

  • 2SD222htest:999900

  • 2SD222atest:1.5

  • 2SD222wtest:10

  • 2SD222代换 2SD222用什么型号代替:BD135,BD226,BD233,BD375,BD575,BD585,3DA21A,

2SD222价格

参考价格:¥0.7459

型号:2SD2226KT146V 品牌:Rohm 备注:这里有2SD222多少钱,2026年最近7天走势,今日出价,今日竞价,2SD222批发/采购报价,2SD222行情走势销售排行榜,2SD222报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN triple diffusion planar type Darlington(For low-frequency amplification)

Silicon NPN triple diffusion planar type Darlington For low-frequency amplification ■ Features ● Suitable for the driver circuit of a motor, a printer hammer and like that, since this transistor is designed for the high forward current transfer ratio hFE ● A shunt resistor is omitted f

PANASONIC

松下

Silicon NPN triple diffusion planar type Darlington(For power amplification)

For power amplification Complementary to 2SB1470 ■Features •Optimum for 120 W Hi-Fi output •High forward current transfer ratio hFE •Low collector-emitter saturation voltage VCE(sat)

PANASONIC

松下

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1470 ·High forward current transfer ratio hFE ·Low saturation voltage VCE(sat) ·DARLINGTON APPLICATIONS ·For power amplification

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1470 ·High DC current gain ·Low saturation voltage VCE(sat) ·DARLINGTON APPLICATIONS ·For power amplification

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1470 ·High DC current gain ·Low saturation voltage VCE(sat) ·DARLINGTON APPLICATIONS ·For power amplification

ISC

无锡固电

Driver Applications????

Features • Suitable for sets whose height is restricted. • High DC current gain. • Large current capacity and wide ASO. Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

SANYO

三洋

Driver Applications????

Driver Applications Features • Suitable for sets whose height is restricted. • High DC current gain. • Large current capacity and wide ASO. Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.

SANYO

三洋

Silicon NPN epitaxial planer type(For low-frequency amplification)

For low-frequency amplification Complementary to 2SB1473 ■Features ● High collector to emitter voltage VCEO of 120V. ● Optimum for low-frequency driver amplification. ● Allowing supply with the radial taping.

PANASONIC

松下

General Purpose Transistor (50V, 0.15A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

ROHM

罗姆

MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

MEDIUM POWER TRANSISTOR(25V, 1.2V) GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

ROHM

罗姆

General Purpose Transistor

Features ● High DC current gain. ● High emitter-base voltage. ● Low saturation voltage.

KEXIN

科信电子

NPN 150mA 50V Muting Transistors

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

ROHM

罗姆

MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

MEDIUM POWER TRANSISTOR(25V, 1.2V) GENERAL PURPOSE TRANSISTOR(50V, 0.15A)

ROHM

罗姆

General Purpose Transistor (50V, 0.15A)

Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Lowsaturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)

ROHM

罗姆

NPN SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER

DESCRIPTION The 2SD2228 is designed for general-purpose applicatons requiring High DC Current and Low Collector Saturation Voltage. This is suitable for appliances including VCR cameras and headphone stereos.

NEC

瑞萨

NPN Silicon Epitaxia

Features ● High dc current. ● Low collector saturation voltage.

KEXIN

科信电子

SILICON TRANSISTOR

NPN SILICON EPTAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER

RENESAS

瑞萨

Power Device - Power Transistors - Others

PANASONIC

松下

Silicon NPN Power Transistors

文件:115.68 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:89.18 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:89.18 Kbytes Page:3 Pages

JMNIC

锦美电子

NPN Epitaxial Planar Silicon Transistors Driver Applications

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Transistors Driver Applications

ONSEMI

安森美半导体

封装/外壳:3-SIP 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 120V 0.5A MT-2 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

PANASONIC

松下

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 0.15A SMT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ROHM

罗姆

2SD222产品属性

  • 类型

    描述

  • 封装:

    SMT3

  • 包装数量:

    3000

  • 最小独立包装数量:

    3000

  • 包装形态:

    Taping

  • RoHS:

    Yes

  • Package Code:

    SOT-346

  • JEITA Package:

    SC-59

  • Number of terminal:

    3

  • Polarity:

    NPN

  • Collector Power dissipation PC[W]:

    0.2

  • Collector-Emitter voltage VCEO1[V]:

    50

  • Collector current Io(Ic) [A]:

    0.15

  • hFE:

    820 to 2700

  • hFE (Min.):

    820

  • hFE (Max.):

    2700

  • Mounting Style:

    Surface mount

  • Storage Temperature (Min.)[°C]:

    -55

  • Storage Temperature (Max.)[°C]:

    150

  • Package Size [mm]:

    2.9x2.8 (t=1.3)

更新时间:2026-5-17 20:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
25+23+
32055
绝对原装正品全新进口深圳现货
onsemi(安森美)
25+
-
22412
正规渠道,免费送样。支持账期,BOM一站式配齐
Panasonic-SSG
24+
MT-3
7500
ROHM
26+
SOT23
11092
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
SANYO/三洋
2023+
TO262
6895
原厂全新正品旗舰店优势现货
ROHM/罗姆
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
三年内
1983
只做原装正品
PANASONIC
22+
TO-264
20000
公司只有原装 品质保证
ROHM/罗姆
2447
SMT3HP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ROHM
最新
SOT-23
12596
原装进口现货库存专业工厂研究所配单供货

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