NPN Transistor

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Silicon NPN epitaxial planer type(For low-voltage output amplification)

Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Low ON resistance Ron. ● High foward current transfer ratio hFE.

Silicon NPN Epitaxial Planar Type

Features ● Low collector-emitter saturation voltage VCE(sat) ● Low on resistance ron. ● High forward current transfer ratio hFE.

Power Transistor

Features High breakdown voltage.(BVCEO = 160V) Low collector output capacitance. (Typ. 20pF at VCB = 10V) High transition frequency.(fT = 80MHZ)

Power Transistor (160V , 1.5A)

Medium Power Transistor(Motor, Relay drive) (60짹10V, 2A)

Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to L loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode.

Medium Power Transistor (Motor, Relay drive) (60V,10V, 2A)

Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to L loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode.

Silicon NPN Epitaxial, Darlington

Application Low frequency power amplifier

Silicon NPN Epitaxial, Darlington

Application Low frequency power amplifier

Silicon NPN Epitaxial, Darlington

Application Low frequency power amplifier

Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type)

Silicon NPN triple diffusion planar type For power amplification ■ Features ● High collector to base voltage VCBO ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type)

Silicon NPN triple diffusion planar type For power amplification ■ Features ● High collector to base voltage VCBO ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

Silicon NPN epitaxial planer type

Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462 ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape

SILICON NPN EPITAXIAL PLANAR TYPE

Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462J ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape

For General Amplification

Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L ■ Features • High forward current transfer ratio hFE • Mold lead-less type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing.

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for low-frequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC out to drivers

DARLINGTON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC out to drive

General High-Current Switching Applications

General High-Current Switching Applications Features • Micaless package facilitating mounting. • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Relay drivers, high-speed inverters, converters.

30V/8A High-Speed Switching Applications

Features • Micaless package facilitating mounting. • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Relay drivers, high-speed inverters, converters, etc.

Silicon NPN epitaxial planar type

SOT-89-3L Plastic-Encapsulate Transistors(NPN)

Driver Transistor

NPN Silicon Epitaxial Planar Transistor

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封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS NPN 160V 1.5A MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 160V 1.5A MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个