NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipm

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • High DC Current Gain- : hFE= 2000(Min)@ (VCE= 2V, IC= 2A) • Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 2A, IB= 2mA) APPLICATIONS • Designed for low-frequency power amplifiers and low-spee

SILICON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA eq

Transistor-Bipolar Power Transistors