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2SD1816T价格
参考价格：￥2.0083
型号：2SD1816T-E 品牌：ON 备注：这里有2SD1816T多少钱，2025年最近7天走势，今日出价，今日竞价，2SD1816T批发/采购报价，2SD1816T行情走势销售排行榜，2SD1816T报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 |   | ||
High-Current Switching Applications High-Current Switching Applications Features • Low collector-to-emitter saturation voltage. • Good linearity of hFE. • Small and slim package facilitating compactness of sets. • High fT. • Fast switching time. Applications • Suitable for relay drivers, high-speed inverters, convert | SANYO 三洋 | | ||
HIGH CURRENT SWITCHIG APPLICATIONS HIGH CURRENT SWITCHIG APPLICATIONS FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed | UTC 友顺 | | ||
HIGH CURRENT SWITCHIG APPLICATION 文件：243.56 Kbytes Page：5 Pages | UTC 友顺 | | ||
High-Current Switching Applications 文件：154.87 Kbytes Page：5 Pages | SANYO 三洋 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 4A TP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
High-Current Switching Applications 文件：496.44 Kbytes Page：9 Pages | SANYO 三洋 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 4A TPFA 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA 文件：366.77 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | |
2SD1816T产品属性
- 类型
描述
- 型号
2SD1816T
- 功能描述
两极晶体管 - BJT BIP NPN 4A 100V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO |
2023+ |
TO-252 |
58000 |
进口原装,现货热卖 |
|||
ONSEMI/安森美 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
UTC/友顺 |
23+ |
TO-251 |
75000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
SANYO/三洋 |
24+ |
NA/ |
3490 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
UTC/友顺 |
25+ |
TO252 |
55000 |
UTC/友顺2SD1816L-R即刻询购立享优惠#长期有货 |
|||
ON |
22+ |
TO-220-3 |
50000 |
ON二三极管全系列在售 |
|||
UTC |
24+ |
TO252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
友顺 UTC |
21+ |
TO-252 |
36740 |
原装正品，实单请联系 |
|||
24+ |
N/A |
72000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
UTC |
2016+ |
TO-252 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
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2019-2-15
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