High-Current Switching Applications

■ Features ● Low Collector-to-Emitter Saturation Voltage ● Fast Switching Speed ● High fT. ● Complementary to 2SB1215

High-Current Switching Applications

Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Collector-to-Emitter Saturation Voltage ● Excllent Linearity of hFE ● High fT ● Fast Switching Time

Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter

isc Silicon NPN Power Transistor

DESCRIPTION ● Excellent linearity of hFE ● Small and slim package making it easy to make 2SD1815/2SB1215-used set smaller ● Low collector-to-emitter saturation voltage ● High fT ● Fast switching speed ● 100 avalanche tested ● Minimum Lot-to-Lot variations for robust device performance and r