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2SD180晶体管资料

2SD180别名：2SD180三极管、2SD180晶体管、2SD180晶体三极管
2SD180生产厂家：日本日电公司
2SD180制作材料：Si-NPN
2SD180性质：开关管（S）_功率放大（L）_低频或音频放大（LF
2SD180封装形式：直插封装
2SD180极限工作电压：80V
2SD180最大电流允许值：5A
2SD180最大工作频率：10MHZ
2SD180引脚数：2
2SD180最大耗散功率：50W
2SD180放大倍数：
2SD180图片代号：E-44
2SD180vtest：80
2SD180htest：10000000
2SD180atest：5
2SD180wtest：50

2SD180代换 2SD180用什么型号代替：BD130,BD245B,BD313,BDX10,BDY20,BDY39,2N3055,2N5758,2SD895,2SD896,3DD64C,

2SD180价格

参考价格：￥1.2879

型号：2SD1801S-E 品牌：ON 备注：这里有2SD180多少钱，2025年最近7天走势，今日出价，今日竞价，2SD180批发/采购报价，2SD180行情走势销售排行榜，2SD180报价。

型号	功能描述	生产厂家企业	LOGO
2SD180	isc Silicon NPN Power Transistor 文件：186.05 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SD180	SILICON NPN DIFFUSED JUNCTION TRANSISTOR 文件：95.72 Kbytes Page：2 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SD1800	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1800	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1800	Driver Applications??? * Relay drivers, hammer drivers, lamp drivers, motor drivers. * High DC current gain (hFE≥4000). * Large current capacity. * Small and slim package making it easy to make 2SD1800-applied sets smaller.	SANYO 三洋	SANYO
2SD1800-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1800-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter	ISC 无锡固电	ISC
2SD1801	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment	ISC 无锡固电	ISC
2SD1801	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment	ISC 无锡固电	ISC
2SD1801	High-Current Switching Applications Features · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. Applications · Voltage regulators, relay drivers, lam	SANYO 三洋	SANYO
2SD1801	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SD1801-251	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment	ISC 无锡固电	ISC
2SD1801-252	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment	ISC 无锡固电	ISC
2SD1801S-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SD1801S-TL-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SD1801T-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SD1801T-TL-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SD1802	TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SD1802	isc Silicon NPN Power Transistor DESCRIPTION • Large current capacitance and wide ASO • Small and slim package making it easy to make2SD1802/ 2SB1202-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and	ISC 无锡固电	ISC
2SD1802	High-Current Switching Applications High-Current Switching Applications Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features · Adoption of FBET, MBIT processes. · Large currrent capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and	SANYO 三洋	SANYO
2SD1802	NPN PLASTIC ENCAPSULATE TRANSISTORS NPN PLASTIC ENCAPSULATE TRANSISTORS Pb Lead(Pb)-Free	WEITRON	WEITRON
2SD1802	HIGH CURRENT SWITCHING APPLICATION ■ DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. ■ FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed	UTC 友顺	UTC
2SD1802	Plastic-Encapsulated Transistors TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL	TEL
2SD1802	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment	ISC 无锡固电	ISC
2SD1802	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment	ISC 无锡固电	ISC
2SD1802-251	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment	ISC 无锡固电	ISC
2SD1802-252	Silicon NPN Power Transistor DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment	ISC 无锡固电	ISC
2SD1802S-E	Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1	ONSEMI 安森美半导体	ONSEMI
2SD1802S-E	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1	ONSEMI 安森美半导体	ONSEMI
2SD1802S-TL-E	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1	ONSEMI 安森美半导体	ONSEMI
2SD1802S-TL-E	Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1	ONSEMI 安森美半导体	ONSEMI
2SD1802T-E	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1	ONSEMI 安森美半导体	ONSEMI
2SD1802T-E	Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1	ONSEMI 安森美半导体	ONSEMI
2SD1802T-TL-E	Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1	ONSEMI 安森美半导体	ONSEMI
2SD1802T-TL-E	Bipolar Transistor Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1	ONSEMI 安森美半导体	ONSEMI
2SD1803	Silicon NPN transistor in a TO-252 Plastic Package. Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. Applications Relay drivers, high-speed inverters, general high-current switching applications.	FOSHAN 蓝箭电子	FOSHAN
2SD1803	HIGH CURRENT SWITCHING APPLICATION ■ DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters ,and other general high-current switching applications. ■ FEATURES * Low Collector-To-Emitter Saturation Voltage. * High Current And High fT. * Excellent Linearity Of hFE. * Fast Switching	UTC 友顺	UTC
2SD1803	High-Current Switching Applications Features · Low collector-to-emitter saturation voltage. · High current and high fT. · Excellent linearity of hFE. · Fast switching speed. · Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller. Applications · Relay drivers, high-speed inverters, converters, and	SANYO 三洋	SANYO
2SD1803	Silicon NPN Power Transistor FEATURES ·High current and high fT ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·Other general high-current switching applications.	ISC 无锡固电	ISC
2SD1803	Silicon NPN Power Transistor FEATURES ·High current and high fT ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·Other general high-current switching applications.	ISC 无锡固电	ISC
2SD1803-251	Silicon NPN Power Transistor FEATURES ·High current and high fT ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·Other general high-current switching applications.	ISC 无锡固电	ISC
2SD1803-252	Silicon NPN Power Transistor FEATURES ·High current and high fT ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·Other general high-current switching applications.	ISC 无锡固电	ISC
2SD1803I	Silicon NPN transistor in a TO-251 Plastic Package. Descriptions Silicon NPN transistor in a TO-251 Plastic Package. Features Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. Applications Relay drivers, high-speed inverters, and other general high-current switching applications.	FOSHAN 蓝箭电子	FOSHAN
2SD1803L-TM3-T	HIGH CURRENT SWITCHING APPLICATION ■ DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters ,and other general high-current switching applications. ■ FEATURES * Low Collector-To-Emitter Saturation Voltage. * High Current And High fT. * Excellent Linearity Of hFE. * Fast Switching	UTC 友顺	UTC
2SD1803T-E	Bipolar Transistor Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot	ONSEMI 安森美半导体	ONSEMI
2SD1803T-H	Bipolar Transistor Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot	ONSEMI 安森美半导体	ONSEMI
2SD1803-TM3-T	HIGH CURRENT SWITCHING APPLICATION ■ DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters ,and other general high-current switching applications. ■ FEATURES * Low Collector-To-Emitter Saturation Voltage. * High Current And High fT. * Excellent Linearity Of hFE. * Fast Switching	UTC 友顺	UTC
2SD1804	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage. • High current and high fT. • Excellent linearity of hFE. • Fast switching time. • Small and slim package making it easy to make 2SB1204/2SD1804-applied sets smaller. Applications • Relay drivers, high-speed inverters, converters, and	SANYO 三洋	SANYO
2SD1804	HIGH CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.	UTC 友顺	UTC
2SD1804L-Q-TM3-R	HIGH CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.	UTC 友顺	UTC
2SD1804L-Q-TM3-T	HIGH CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.	UTC 友顺	UTC
2SD1804L-Q-TN3-R	HIGH CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.	UTC 友顺	UTC
2SD1804L-Q-TN3-T	HIGH CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.	UTC 友顺	UTC
2SD1804L-R-TM3-R	HIGH CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.	UTC 友顺	UTC
2SD1804L-R-TM3-T	HIGH CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.	UTC 友顺	UTC
2SD1804L-R-TN3-R	HIGH CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.	UTC 友顺	UTC
2SD1804L-R-TN3-T	HIGH CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.	UTC 友顺	UTC
2SD1804L-S-TM3-R	HIGH CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.	UTC 友顺	UTC
2SD1804L-S-TM3-T	HIGH CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.	UTC 友顺	UTC
2SD1804L-S-TN3-R	HIGH CURRENT SWITCHING APPLICATIONS NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.	UTC 友顺	UTC

2SD180产品属性

类型
描述
型号
2SD180
功能描述
两极晶体管 - BJT BIP NPN 2A 50V
RoHS
否
制造商
STMicroelectronics
晶体管极性
PNP 集电极—基极电压
VCBO
集电极—发射极最大电压
VCEO
- 40 V 发射极 - 基极电压
VEBO
- 6 V
增益带宽产品fT
直流集电极/Base Gain hfe
Min
100 A
安装风格
SMD/SMT
封装/箱体
PowerFLAT 2 x 2

2SD180供应商更多...

更新时间：2025-12-25 8:02:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市华来深电子有限公司	2SD1802S-TL	ROHM	25+	SMD	20000	专做罗姆，一系列可以订货排单，只做原装正品假一罚十	询价
深圳市益百分电子有限公司	2SD1803	三洋	TO251	200000	2012		询价
深圳市得捷芯城科技有限公司	2SD1800-TL	SANYO/三洋	24+	NA/	3697	原装现货,当天可交货,原型号开票	询价
谛辉(北京/上海/青岛 )电子科技有限公司	2SD1804S	SANYO(三洋)	25+	贴片三极管	7987000	进口原装现货18930689907微信同步	询价
中天科工半导体（深圳）有限公司	2SD1802	SANYO/三洋	25+	TO-252251	45000	SANYO/三洋全新现货2SD1802即刻询购立享优惠#长期有排单订	询价
深圳市科翼源电子有限公司	2SD1804	三洋	23+	TO-252	4750	原厂原装正品	询价
深圳市星辰微电科技有限公司	2SD1801	ON	22+	TO-220-3	50000	ON二三极管全系列在售	询价
深圳市讯顺达科技有限公司	2SD1803L-S-TN3-R	UTC(友顺)	24+/25+	TO-252-2(DPAK)	2500	UTC原厂一级代理商,价格优势!	询价
深圳市赛美科科技有限公司	2SD1801S	SANYO		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市诚利顺电子科技有限公司	2SD1803	SANYO	25+	TO252	6500	十七年专营原装现货一手货源,样品免费送	询价

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