2SD1802晶体管资料

  • 2SD1802别名:2SD1802三极管、2SD1802晶体管、2SD1802晶体三极管

  • 2SD1802生产厂家:日本三洋公司

  • 2SD1802制作材料:Si-NPN

  • 2SD1802性质:开关管 (S)_功率放大 (L)_LO.SAT

  • 2SD1802封装形式:直插封装

  • 2SD1802极限工作电压:60V

  • 2SD1802最大电流允许值:3A

  • 2SD1802最大工作频率:150MHZ

  • 2SD1802引脚数:3

  • 2SD1802最大耗散功率:15W

  • 2SD1802放大倍数

  • 2SD1802图片代号:A-80

  • 2SD1802vtest:60

  • 2SD1802htest:150000000

  • 2SD1802atest:3

  • 2SD1802wtest:15

  • 2SD1802代换 2SD1802用什么型号代替:2SC3303,2SD1221,2SD1252,2SD1448,2SD1815,2SD1816,

2SD1802价格

参考价格:¥1.3025

型号:2SD1802S-E 品牌:ON 备注:这里有2SD1802多少钱,2025年最近7天走势,今日出价,今日竞价,2SD1802批发/采购报价,2SD1802行情走势销售排行榜,2SD1802报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SD1802

NPN PLASTIC ENCAPSULATE TRANSISTORS

NPN PLASTIC ENCAPSULATE TRANSISTORS Pb Lead(Pb)-Free

WEITRON

2SD1802

HIGH CURRENT SWITCHING APPLICATION

■ DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. ■ FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed

UTC

友顺

2SD1802

High-Current Switching Applications

High-Current Switching Applications Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features · Adoption of FBET, MBIT processes. · Large currrent capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and

SANYO

三洋

2SD1802

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

东电电子

2SD1802

isc Silicon NPN Power Transistor

DESCRIPTION • Large current capacitance and wide ASO • Small and slim package making it easy to make2SD1802/ 2SB1202-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and

ISC

无锡固电

2SD1802

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

2SD1802

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment

ISC

无锡固电

2SD1802

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment

ISC

无锡固电

2SD1802

50V,3A,Medium Power NPN Bipolar Transistor

GALAXYCHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD.

银河微电常州银河世纪微电子股份有限公司

2SD1802

HIGH CURRENT SWITCHING APPLICATION

UTC

友顺

2SD1802

晶体管

JSCJ

长晶科技

2SD1802

HIGH CURRENT SWITCHING APPLICATION

文件:179.31 Kbytes Page:3 Pages

UTC

友顺

2SD1802

Bipolar Transistor

文件:215.03 Kbytes Page:8 Pages

ONSEMI

安森美半导体

2SD1802

High-Current Switching Applications

文件:500 Kbytes Page:10 Pages

SANYO

三洋

2SD1802

HIGH CURRENT SWITCHING APPLICATION

文件:288.99 Kbytes Page:4 Pages

UTC

友顺

2SD1802

TO-251-3L Plastic-Encapsulate Transistors

文件:1.02689 Mbytes Page:3 Pages

JIANGSU

长电科技

2SD1802

Transistor (npn)

文件:582.43 Kbytes Page:3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment

ISC

无锡固电

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

ONSEMI

安森美半导体

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

ONSEMI

安森美半导体

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

ONSEMI

安森美半导体

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

ONSEMI

安森美半导体

HIGH CURRENT SWITCHING APPLICATION

文件:179.31 Kbytes Page:3 Pages

UTC

友顺

NPN Transistors

文件:1.20868 Mbytes Page:2 Pages

KEXIN

科信电子

HIGH CURRENT SWITCHING APPLICATION

文件:288.99 Kbytes Page:4 Pages

UTC

友顺

HIGH CURRENT SWITCHING APPLICATION

文件:179.31 Kbytes Page:3 Pages

UTC

友顺

HIGH CURRENT SWITCHING APPLICATION

文件:179.31 Kbytes Page:3 Pages

UTC

友顺

HIGH CURRENT SWITCHING APPLICATION

文件:179.31 Kbytes Page:3 Pages

UTC

友顺

Bipolar Transistor

文件:215.03 Kbytes Page:8 Pages

ONSEMI

安森美半导体

High-Current Switching Applications

文件:500 Kbytes Page:10 Pages

SANYO

三洋

High-Current Switching Applications

文件:500 Kbytes Page:10 Pages

SANYO

三洋

High-Current Switching Applications

文件:500 Kbytes Page:10 Pages

SANYO

三洋

Bipolar Transistor

文件:215.03 Kbytes Page:8 Pages

ONSEMI

安森美半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:散装 描述:TRANS NPN 50V 3A TPFA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

High-Current Switching Applications

文件:500 Kbytes Page:10 Pages

SANYO

三洋

High-Current Switching Applications

文件:500 Kbytes Page:10 Pages

SANYO

三洋

Bipolar Transistor

文件:215.03 Kbytes Page:8 Pages

ONSEMI

安森美半导体

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 50V 5A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

High-Current Switching Applications

文件:500 Kbytes Page:10 Pages

SANYO

三洋

Bipolar Transistor

文件:215.03 Kbytes Page:8 Pages

ONSEMI

安森美半导体

High-Current Switching Applications

文件:500 Kbytes Page:10 Pages

SANYO

三洋

High-Current Switching Applications

文件:500 Kbytes Page:10 Pages

SANYO

三洋

2SD1802产品属性

  • 类型

    描述

  • 型号

    2SD1802

  • 功能描述

    两极晶体管 - BJT BIP NPN 3A 50V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-10-7 8:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO252
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
SANYO/三洋
24+
TO-252
22055
郑重承诺只做原装进口现货
ROHM
25+
SMD
20000
专做罗姆,一系列可以订货排单,只做原装正品假一罚十
ON
2023+
TO-252
8800
正品渠道现货 终端可提供BOM表配单。
SANYO/三洋
22+
SOT-252
100000
代理渠道/只做原装/可含税
onsemi
两年内
NA
580
实单价格可谈
UTC
2024+
TO-252
500000
诚信服务,绝对原装原盘
SONY
08+
TO263
2550
全新原装进口自己库存优势
SAN
24+
原厂封装
3500
原装现货假一罚十
SANYO/三洋
24+
NA/
8250
原装现货,当天可交货,原型号开票

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