Driver Applications???

* Relay drivers, hammer drivers, lamp drivers, motor drivers. * High DC current gain (hFE≥4000). * Large current capacity. * Small and slim package making it easy to make 2SD1800-applied sets smaller.

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·DC Current Gain- : hFE= 4000(Min)@ IC= 0.5A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment

High-Current Switching Applications

Features · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. Applications · Voltage regulators, relay drivers, lam

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-

Bipolar Transistor, 50V, 2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

2SD1801 is a Bipolar Transistor, 50V, 2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA for High-Current Switching Application. • Adoption of FBET, MBIT processes\n• Large current capacitance and wide ASO\n• Low collector-to-emitter saturation voltage\n• Fast switching speed\n• Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller;

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-

High-Current Switching Applications

High-Current Switching Applications Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features · Adoption of FBET, MBIT processes. · Large currrent capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment

NPN PLASTIC ENCAPSULATE TRANSISTORS

NPN PLASTIC ENCAPSULATE TRANSISTORS Pb Lead(Pb)-Free

isc Silicon NPN Power Transistor

DESCRIPTION • Large current capacitance and wide ASO • Small and slim package making it easy to make2SD1802/ 2SB1202-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment

双极晶体管，50V，3A, 低饱和压，NPN 单 TP/TP-FA

2SB1202/2SD1802 is Bipolar Transistor (-)50V (-)5A VCE(sat);(-0.7)0.5mV max. (PNP)NPN Single TP for High-Current Switching Applications • Low collector-to-emitter saturation voltage\n• Fast switching speed\n• Laege current capacitance and wide ASO\n• adoption of FBET and MBIT process\n• Small and slim package making it easy to make 2SB1202/2SD1802 used sets smaller;

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

HIGH CURRENT SWITCHING APPLICATION

■ DESCRIPTION The UTC 2SD1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. ■ FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment

Silicon NPN Power Transistor

DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

Bipolar Transistor

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

High-Current Switching Applications

Features · Low collector-to-emitter saturation voltage. · High current and high fT. · Excellent linearity of hFE. · Fast switching speed. · Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller. Applications · Relay drivers, high-speed inverters, converters, and

Silicon NPN Power Transistor

FEATURES ·High current and high fT ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·Other general high-current switching applications.

Silicon NPN Power Transistor

FEATURES ·High current and high fT ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·Other general high-current switching applications.

HIGH CURRENT SWITCHING APPLICATION

■ DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters ,and other general high-current switching applications. ■ FEATURES * Low Collector-To-Emitter Saturation Voltage. * High Current And High fT. * Excellent Linearity Of hFE. * Fast Switching

Silicon NPN transistor in a TO-252 Plastic Package.

Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. Applications Relay drivers, high-speed inverters, general high-current switching applications.

Silicon NPN Power Transistor

FEATURES ·High current and high fT ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·Other general high-current switching applications.

Silicon NPN Power Transistor

FEATURES ·High current and high fT ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·Other general high-current switching applications.

Silicon NPN transistor in a TO-251 Plastic Package.

Descriptions Silicon NPN transistor in a TO-251 Plastic Package. Features Low VCE(sat), high current and high fT, excellent linearity of hFE, fast switching time. Applications Relay drivers, high-speed inverters, and other general high-current switching applications.

HIGH CURRENT SWITCHING APPLICATION

■ DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters ,and other general high-current switching applications. ■ FEATURES * Low Collector-To-Emitter Saturation Voltage. * High Current And High fT. * Excellent Linearity Of hFE. * Fast Switching

Bipolar Transistor

Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot

Bipolar Transistor

Features • Low collector-to-emitter saturation voltage • High current and high fT • Excellent linearity of hFE • Fast switching speed • Small and slim package making it easy to make 2SB1203/2SD1803-applied sets smaller Applications • Relay drivers, high-speed inverters, converters, and ot

HIGH CURRENT SWITCHING APPLICATION

■ DESCRIPTION The UTC 2SD1803 applies to relay drivers, high-speed inverters, converters ,and other general high-current switching applications. ■ FEATURES * Low Collector-To-Emitter Saturation Voltage. * High Current And High fT. * Excellent Linearity Of hFE. * Fast Switching

High-Current Switching Applications

Features • Low collector-to-emitter saturation voltage. • High current and high fT. • Excellent linearity of hFE. • Fast switching time. • Small and slim package making it easy to make 2SB1204/2SD1804-applied sets smaller. Applications • Relay drivers, high-speed inverters, converters, and

HIGH CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.

HIGH CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.

HIGH CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.

HIGH CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.

HIGH CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.

HIGH CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.

HIGH CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.

HIGH CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.

HIGH CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.

HIGH CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.

HIGH CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.

HIGH CURRENT SWITCHING APPLICATIONS

NPN SILICON TRANSISTOR ■ FEATURES * Low collector-to-emitter saturation voltage * High current and high fT * Excellent linerarity of hFE. * Fast switching time * Small and slim package making it easy to make UTC 2SD1804 applied sets smaller.