100V/3A Switching Applications

Features 1. Low collector-to-emitter saturation voltage 2. High f T 3. Excellent linearity of h FE 4. Fast switching time

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage VCEO: 100 V(Min) ·Low Collector Saturation Voltage : VCE(sat) = 0.4V(Max.)@ IC= 1.5A ·Complement to the PNP 2SB1167 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high v

TO-126 Plastic-Encapsulate Transistors

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