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2SD171晶体管资料
2SD1710别名：2SD1710三极管、2SD1710晶体管、2SD1710晶体三极管
2SD1710生产厂家：
2SD1710制作材料：Si-NPN
2SD1710性质：电视 （TV）_行输出 （HA）
2SD1710封装形式：直插封装
2SD1710极限工作电压：1500V
2SD1710最大电流允许值：5A
2SD1710最大工作频率：<1MHZ或未知
2SD1710引脚数：3
2SD1710最大耗散功率：50W
2SD1710放大倍数：
2SD1710图片代号：B-11
2SD1710vtest：1500
2SD1710htest：999900
- 2SD1710atest：5
2SD1710wtest：50
2SD1710代换 2SD1710用什么型号代替：BD508AF,2SC4142,2SC4143,2SD1655,2SD1656,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN Power Transistors DESCRIPTION • With TO-3PML package • High voltage;high speed • High reliability. APPLICATIONS • Ultrahigh-definition CRT display • Horizontal deflection output applications | ISC 无锡固电 |   | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PML package • High voltage;high speed • High reliability. APPLICATIONS • Ultrahigh-definition CRT display • Horizontal deflection output applications | SAVANTIC | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic package,pimarily for use in horizontal deflection circuites of colour television receivers | WINGS 永盛电子 | | ||
NPN Triple Diffused Planar Silicon Transistor 500V / 7A Switching Regulator Applications 500V / 7A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed. • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating mounting. | SANYO 三洋 | | ||
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) ● High Collector-Base Voltage(VCBO=1500V) ● High Speed Switching | WINGS 永盛电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SB1157 • High transition frequency fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SB1157 • High transition frequency fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SB1158 APPLICATIONS • Designed for high power amplifier applications. | ISC 无锡固电 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SB1159 APPLICATIONS • Designed for high power amplifier applications. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SB1160 • High transition frequency fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SB1160 • High transition frequency fT • Satisfactory linearity of hFE • Wide area of safe operation APPLICATIONS • For high power amplifier applications | SAVANTIC | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SB1161 APPLICATIONS • Designed for high power amplifier applications. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1162 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications | SAVANTIC | | ||
Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1162 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SB1163 • Excellent linearity of hFE • Wide area of safe operation (ASO) • High transition frequency fT APPLICATIONS • For high power amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SB1163 • Excellent linearity of hFE • Wide area of safe operation (ASO) • High transition frequency fT APPLICATIONS • For high power amplifier applications | SAVANTIC | | ||
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER Si NPN Triple Diffused Plabar High Power Amplifier Commplementary Pair with 2SB1163 | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Silicon NPN triple diffusion planar type Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio ■ Features • High forward current transfer ratio hFE which has satisfactory lin earity • High emitter-base voltage (Collector open) VEBO • N type package enabling direct soldering of the | Panasonic 松下 | | ||
Silicon NPN Triple Diffusion Planar Type Features ● High forward current transfer ratio hFE which has satisfactory linearity ● High emitter-base voltage (Collector open) VEBO | KEXIN 科信电子 | | ||
Silicon NPN Power Transistors 文件：148 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN transistor in a TO-220 Plastic Package. 文件：938.64 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
Silicon NPN transistor in a TO-220F Plastic Package. 文件：810.82 Kbytes Page：6 Pages | FOSHAN 蓝箭电子 | | ||
双极晶体管 | FOSHAN 蓝箭电子 | | ||
Silicon NPN Power Transistors 文件：93.33 Kbytes Page：3 Pages | ISC 无锡固电 | | ||
Silicon NPN Power Transistors 文件：129.38 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：130.96 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：122.65 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：150.57 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：182.63 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：114.41 Kbytes Page：3 Pages | SAVANTIC | | ||
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER | ETC 知名厂家 | ETC | | |
Power Device - Power Transistors - General-Purpose power amplification | Panasonic 松下 | |
2SD171产品属性
- 类型
描述
- 型号
2SD171
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY MATS. TRANS. TOP-3L 160V 12A 120W BCE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
24+ |
NA/ |
3442 |
原装现货,当天可交货,原型号开票 |
|||
MAT |
24+ |
TO3P |
990000 |
明嘉莱只做原装正品现货 |
|||
SANYO/三洋 |
23+ |
6000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
||||
SANYO |
24+ |
60000 |
|||||
SANYO |
18+ |
TO-3P |
85600 |
保证进口原装可开17%增值税发票 |
|||
SANYO/三洋 |
23+ |
TO3P |
6500 |
专注配单,只做原装进口现货 |
|||
SANYO/三洋 |
2447 |
TO-3P |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
PANASONIC/松下 |
25+ |
TO3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
SANYO/三洋 |
TO-3PF |
22+ |
6000 |
十年配单,只做原装 |
|||
SAN |
24+ |
原厂封装 |
3500 |
原装现货假一罚十 |
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2019-2-15
DdatasheetPDF页码索引
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