Silicon NPN triple diffusion planar type Darlington(For low-freauency power amplification)

Silicon NPN epitaxial planar type

For power switching Complementary to 2SB1156 ■Features •Low collector-emitter saturation voltage VCE(sat) •Satisfactory linearity of forward current transfer ratio hFE •Large collector current IC •Full-pack package which can be installed to the heat sink with one screw

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO = 80V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 8A ·Complement to Type 2SB1156 APPLICATIONS ·Designed for power switching applications