Triple Diffused Planar NPN Silicon Transistor

Features 1) Low collector saturation voltage : VCE(sat)= 0.3V(Typ.)(IC/IB= 4A/0.4A) 2) Excellent current response of DC current gain (hFE). 3) High collector power dissipation: Pc=40W (Tc=25°C) 4) Wide ASO. 5) Easy packaging because of its mold type design

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A • High Collector Power Dissipation • Good Linearity of hFE • Wide Area of Safe Operation APPLICATIONS • Designed for low frequency power amplifier applications.